A review of electrical characterization techniques for ultrathin FDSOI materials and devices

Cristoloveanu Sorin; Bawedin Maryline; Ionica Irina

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A review of electrical characterization techniques for ultrathin FDSOI materials and devices

机译：超薄FDSOI材料和器件的电表征技术综述

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The characterization of nanosize SOI materials and devices is challenging because multiple oxides, interfaces and channels coexist. Conventional measurement methods need to be replaced, or at least updated. We review the routine techniques that proved efficient for the evaluation of bare SOI wafers (essentially the pseudo-MOSFET) and of MOS structures (transistors and gated diodes). Informative examples are selected to illustrate the typical properties of advanced SOI wafers and MOSFETs. We will show how the ultrathin film and short-channel effects affect the interpretation of the experimental data. (C) 2015 Elsevier Ltd. All rights reserved.

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来源
《Solid-State Electronics》 |2016年第3期|10-36|共27页
作者
Cristoloveanu Sorin; Bawedin Maryline; Ionica Irina;
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作者单位

Univ Grenoble Alpes, IMEP LAHC, Minatec, Grenoble INP,CNRS,UMR 5130, F-38016 Grenoble, France;

Univ Grenoble Alpes, IMEP LAHC, Minatec, Grenoble INP,CNRS,UMR 5130, F-38016 Grenoble, France;

Univ Grenoble Alpes, IMEP LAHC, Minatec, Grenoble INP,CNRS,UMR 5130, F-38016 Grenoble, France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词
Characterization; SOI; Size effects; Ultrathin films; Pseudo-MOSFET; Parameter extraction;

机译：表征;SOI;尺寸效应;超薄膜;伪MOSFET;参数提取;

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A review of electrical characterization techniques for ultrathin FDSOI materials and devices

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