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首页> 外文会议>Electrochemical Society Meeting and International Symposium on ULSI Process Integration III; 20030428-20030502; Paris; FR >DEFECT GENERATION AND SUPPRESSION IN DEVICE PROCESSES USING A SHALLOW TRENCH ISOLATION SCHEME
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DEFECT GENERATION AND SUPPRESSION IN DEVICE PROCESSES USING A SHALLOW TRENCH ISOLATION SCHEME

机译：使用浅沟槽隔离方案的设备过程中的缺陷生成和抑制

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摘要

In this paper the critical factors for defect formation in device processing are identified and various approaches to the problem of defect suppression in device processing are discussed. The mechanisms of stress development are identified by comparing experimental results and numerical simulations. Elastic stress is estimated from Raman shift and TEM-CBED measurements, and defect generation is monitored by electrical measurements of specific monitor structures. Thermal oxidations of the STI structure are shown to be a major responsible of the stress increase. Modifications of the oxidation technology may result in an important stress reduction. Implantation conditions and implantation damage recovery is shown to be another key factor in defect generation. The results of specific experiments are discussed with the purpose of identifying the role of implantation damage and amorphization in defect formation. The recristallization of a highly stressed region results to be a critical step for defect generation.
机译：本文确定了器件加工中缺陷形成的关键因素，并讨论了解决器件加工中缺陷抑制问题的各种方法。通过比较实验结果和数值模拟，可以确定应力发展的机理。弹性应力是通过拉曼位移和TEM-CBED测量来估算的，缺陷的产生是通过特定监测器结构的电气测量来监测的。 STI结构的热氧化被证明是应力增加的主要原因。氧化技术的修改可能会导致重要的应力降低。植入条件和植入损伤的恢复被证明是缺陷产生的另一个关键因素。讨论了特定实验的结果，目的是确定植入损伤和非晶化在缺陷形成中的作用。高应力区域的再结晶化是产生缺陷的关键步骤。

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