Abstract: This paper describes a 1 kW average power soft x-ray source for application to sub-micron lithography. This source will be capable of 1 second resist exposure times, assuming 15 mJ/cm$+2$/ resist sensitivity, with feature sizes $LS 0.18 micron. The source is based on the X-Pinch, a pulsed plasma soft x-ray source which was initially developed at Cornell University for lithography. Experiments have been performed to characterize the radiation emitted from magnesium (Mg) wire X-Pinch plasmas using an 80 ns, $LS 500 kA pulse. Applied Pulsed Power has designed and is building a 1 kW average power soft x-ray source using the X- Pinch and a 40 pulse/second (pps), 500 kA/pulser. This system is designed to deliver 25 mW/cm$+2$/, after the attenuation due to a protective beryllium (Be) foil filter and the lithography mask, to a wafer located 56 cm from the source. This paper summarizes the experimental results and discusses the implications of these test results for microlithography applications. The design of the 1 kW source is described, including the pulser, 40 pps wire array loader, and the debris shielding. Results of initial system testing are presented. !8
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机译：摘要：本文描述了一种用于亚微米光刻的平均功率为1 kW的软X射线源。假设15 mJ / cm $ + 2 $ /抗蚀剂敏感度，且特征尺寸为$ LS 0.18微米，此源将具有1秒的抗蚀剂曝光时间。该源基于X-Pinch（脉冲等离子软X射线源），最初是由康奈尔大学开发的用于光刻的技术。已经进行了实验，以表征使用80 ns，$ LS 500 kA脉冲的镁（Mg）线X-Pinch等离子体发射的辐射。 Applied Pulsed Power已设计并正在使用X-Pinch和40脉冲/秒（pps），500 kA /脉冲器构建1 kW平均功率的软X射线源。该系统设计成在经过保护性铍（Be）箔滤光片和光刻掩膜造成的衰减之后，以25 mW / cm $ + 2 $ /的速度向距源头56 cm处的晶片供电。本文总结了实验结果，并讨论了这些测试结果对微光刻应用的意义。描述了1 kW光源的设计，包括脉冲发生器，40 pps线阵列装载器和碎片屏蔽。给出了初始系统测试的结果。 ！8
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