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首页> 外文会议>European Photovoltaic Solar Energy Conference; 20060904-08; Dresden(DE) >WET-CHEMICAL PASSIVATION OF INTERFACE DEFECTS IN a-SI:H/c-SI HETEROJUNCTION SOLAR CELLS WITH RANDOMLY DISTRIBUTED PYRAMIDS
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WET-CHEMICAL PASSIVATION OF INTERFACE DEFECTS IN a-SI:H/c-SI HETEROJUNCTION SOLAR CELLS WITH RANDOMLY DISTRIBUTED PYRAMIDS

机译：带有随机分布的金字塔的a-SI：H / c-SI异质结太阳能电池中界面缺陷的湿化学钝化

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Two non destructive, very surface sensitive techniques, the large-signal field-modulated surface photo-voltage (SPV) method and pulsed photoluminescence spectroscopy (PL) were applied to investigate both wet-chemically treated substrate surfaces and a-Si/c-Si interfaces. In order to prepare silicon substrates with randomly distributed pyramids without surface micro-roughness and native oxide contamination and to passivate them during the technological process, we investigated special combinations of wet-chemical etching and cleaning procedures. Compared to conventional pre-treatments, significantly lower densities surface states and recombination loss were achieved on silicon substrates textured with randomly distributed upside pyramids and on the resulting a-Si/c-Si interfaces after deposition. It was shown that the open circuit voltage V_(oc) and solar cell efficiency of TCO/a-Si:H(n)/c-Si(p)/Al solar cells are mainly influence by the preparation-induced morphology and electronic properties of substrate surface.
机译：两种无损，非常表面敏感的技术，大信号场调制表面光电压（SPV）方法和脉冲光致发光光谱法（PL）用于研究湿化学处理的衬底表面和a-Si / c-Si接口。为了制备具有随机分布的金字塔且没有表面微粗糙度和天然氧化物污染的硅衬底，并在工艺过程中对其进行钝化，我们研究了湿化学蚀刻和清洁程序的特殊组合。与常规预处理相比，在沉积有随机分布的上棱锥的硅衬底上以及沉积后所得的a-Si / c-Si界面上，密度密度显着降低。结果表明，TCO / a-Si：H（n）/ c-Si（p）/ Al太阳能电池的开路电压V_（oc）和太阳能电池效率主要受制备诱导形貌和电子性能的影响基材表面。

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