首页> 外文会议>European Photovoltaic Solar Energy Conference; 20060904-08; Dresden(DE) >HIGH RATE SPUTTER DEPOSITED AND TEXTURE ETCHED ZnO:Al FILMS FOR SILICON THIN FILM SOLAR CELLS
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HIGH RATE SPUTTER DEPOSITED AND TEXTURE ETCHED ZnO:Al FILMS FOR SILICON THIN FILM SOLAR CELLS

机译:用于硅薄膜太阳能电池的高速率溅射沉积和纹理刻蚀的ZnO:Al薄膜

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Aluminum doped zinc oxide (ZnO:Al) films were prepared by high rate magnetron sputter deposition either in reactive or non reactive mode from metallic or ceramic targets, respectively. These two different sputtering modes were compared in view on industrial scale production. We characterized the electrical properties in dependence on deposition parameters and growth rate. The deposition pressure dependence and statically deposited ZnO:Al films revealed a strong influence of high energy ion bombardment, which reduces conductivity and thus has to be avoided by appropriate deposition conditions. Finally, texture-etched ZnO:Al films were successfully applied as front contacts for silicon thin film solar cells. An initial aperture area (676 cm~2) module efficiency of nearly 10 % was achieved for a-Si:H/μc-Si:H tandem modules for both ZnO:Al preparation processes.
机译:铝掺杂的氧化锌(ZnO:Al)膜是通过高速率磁控溅射沉积分别以金属或陶瓷靶材的反应性或非反应性方式制备的。从工业规模生产的角度比较了这两种不同的溅射方式。我们表征了取决于沉积参数和生长速率的电性能。沉积压力依赖性和静态沉积的ZnO:Al膜显示出高能离子轰击的强烈影响,这会降低电导率,因此必须通过适当的沉积条件来避免。最后,成功将纹理刻蚀的ZnO:Al薄膜用作硅薄膜太阳能电池的正面触点。对于两种ZnO:Al制备工艺,a-Si:H /μc-Si:H串联模块的初始孔径面积(676 cm〜2)组件效率均达到近10%。

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