首页> 外文会议>European Photovoltaic Solar Energy Conference; 20060904-08; Dresden(DE) >OBSERVATION OF PHOTOGATING EFFECT IN MICROCRYSTALLINE SILICON SOLAR CELLS AND ITS CONTRIBUTION TO DEVICE OPTIMIZATION
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OBSERVATION OF PHOTOGATING EFFECT IN MICROCRYSTALLINE SILICON SOLAR CELLS AND ITS CONTRIBUTION TO DEVICE OPTIMIZATION

机译:微晶硅太阳能电池光合效应的观察及其对器件优化的贡献

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摘要

A photogating effect is observed under strong blue bias light in microcrystalline silicon solar cells with an i-layer made by hot-wire CVD technique. Computer simulations point out that this is related to a low internal electrical field due to electronic defects in the i-layer. By improving the i-layer quality, this effect is reduced and an efficiency of 8.52% is reached for a μc-Si: H n-i-p cell.
机译:在具有通过热线CVD技术制成的i层的微晶硅太阳能电池中,在强蓝色偏光下观察到光选效应。计算机仿真指出,这与i层中的电子缺陷引起的内部电场低有关。通过提高i层质量,可以降低这种影响,对于μc-Si:H n-i-p电池,其效率达到8.52%。

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