INTRODUCTION OF HYDROGEN INTO BULK SILICON DURING PLASMA TREATMENTS USING A STOP LAYER FORMED BY ION IMPLANTATION

机译：使用离子注入形成的停止层在等离子体处理过程中将氢引入大块硅中

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To estimate the small concentration of H that is introduced by the hydrogenation of Si based structures a method, which uses formation of a stop-layer by ion implantation of different ions (Si+, Ge+, He+) followed by an annealing, is proposed The method is based on a recently observed phenomenon that during the ion implantation with an appropriate energy and dose two buried defect zones are formed: (i) at the projected range of the silicon ions (Rp) and in a region at about Rp/2. In this study it is demonstrated that these zones act as trapping ones to getter hydrogen/deuterium, which is in-diffused from plasma treated surface into ion implanted and then annealed Si. Cz Si samples were implanted with Si+, Ge+ or He+ ions followed by a post-implantation annealing. The hydrogen/deuterium plasma treatments of the samples were performed at 300℃. Secondary ion mass spectrometry (SIMS) was used for analysis of the hydrogen distribution. It is demonstrated that accumulation of the diffused hydrogen occurs at both Rp and Rp/2. It is found that the trapped at buried defect layers hydrogen/deuterium can indicate the efficiency of a hydrogenation process. It is shown that concentration of H/D atoms introduced into the Si bulk from plasma is much higher than that from hydrogen containing SiN_x layers.

机译：为了估算由硅基结构的氢化而引入的少量H，提出了一种方法，该方法利用通过离子注入不同离子（Si +，Ge +，He +）并随后进行退火来形成停止层的方法。基于最近观察到的现象，在以适当的能量和剂量进行离子注入期间，形成了两个掩埋的缺陷区：（i）在硅离子的投射范围（Rp）和大约Rp / 2的区域。在这项研究中，证明了这些区域可作为俘获氢/氘的俘获区，氢/氘从等离子体处理过的表面扩散到离子注入然后退火的硅中。将Cz Si样品注入Si +，Ge +或He +离子，然后进行注入后退火。样品的氢/氘等离子体处理在300℃下进行。二次离子质谱（SIMS）用于分析氢的分布。已证明在Rp和Rp / 2处都发生了扩散氢的积累。发现被困在掩埋缺陷层中的氢/氘可以表明氢化过程的效率。结果表明，从等离子体引入到Si块中的H / D原子的浓度远高于从含氢的SiN_x层中引入的H / D原子的浓度。

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来源
《European Photovoltaic Solar Energy Conference; 20060904-08; Dresden(DE)》|2006年|P.1467-1470|共4页
会议地点 Dresden(DE)
作者
A.G. Ulyashin; J.S. Christensen; B.G. Svensson; A. Bentzen; A. Suphellen; E.S. Marstein; A. Holt; R. Kogler; W. Skorupa;
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作者单位

University of Oslo, Center for Material Science and Nanotechnology, P.O. Box 1048 Blindern, NO-0316 Oslo, Norway;

Renewable Energy Corp. AS, Veritasveien 14, P.O. Box 280, NO-1323 Hovik;

Institute for Energy Technology, P.O. Box 40, NO-2027 Kjeller, Norway;

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原文格式 PDF
正文语种 eng
中图分类太阳能技术;
关键词
silicon; gettering; hydrogenation;

机译：硅;吸气;氢化;

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专利

1. Hydrogen gettering at buried defect layers in ion-implanted silicon by plasma hydrogenation and annealing [J] . A.G. Ulyashin, J.S. Christensen, B.G. Svensson, Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms . 2006,第1a2期

机译：通过等离子体氢化和退火在离子注入硅中的掩埋缺陷层处吸氢
2. Influence of ultrathin amorphous silicon layers on the nucleation of microcrystalline silicon films under hydrogen plasma treatment [J] . Z. W. Zuo, W. T. Guan, Y. Wang, Applied Physics Letters . 2011,第4期

机译：氢等离子体处理超薄非晶硅层对微晶硅膜形核的影响
3. Single layer of silicon quantum dots in silicon oxide matrix: Investigation of forming gas hydrogenation on photoluminescence properties and study of the composition of silicon rich oxide layers [J] . P. Aliberti, S.K. Shrestha, Ruoyu Li, Journal of Crystal Growth . 2011,第1期

机译：氧化硅基体中的单层硅量子点：形成气体氢化对光致发光特性的研究以及富硅氧化物层的组成研究
4. INTRODUCTION OF HYDROGEN INTO BULK SILICON DURING PLASMA TREATMENTS USING A STOP LAYER FORMED BY ION IMPLANTATION [C] . A.G. Ulyashin, J.S. Christensen, B.G. Svensson, European Photovoltaic Solar Energy Conference . 2006

机译：使用离子注入形成的止挡层在等离子体处理过程中引入氢气中的散装硅。
5. Separation by plasma implantation of oxygen with plasma immersion ion implantation to form silicon-on-insulator. [D] . Iyer, S. Sundar Kumar. 1998

机译：通过等离子体注入氧气和等离子体浸没离子注入进行分离，以形成绝缘体上硅。
6. Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix [O] . Shigeru Yamada, Yasuyoshi Kurokawa, Shinsuke Miyajima, 2014

机译：氢等离子体处理非晶碳化硅基体减少硅量子点超晶格结构缺陷的研究
7. A Comparative Analysis of Structural Defect Formation in Si+ Implanted and then Plasma Hydrogenated and in H+ Implanted Crystalline Silicon [O] . Heidi Nordmark, Er Ulyashin, John C. Walmsley 2016

机译：si +注入然后等离子体氢化和H +注入晶体硅中结构缺陷形成的对比分析
8. Effects of Damage on Hydrogen-Implant-Induced Thin-Film Separation from Bulk Silicon Carbide. [R] . Gregory, R. B., Holland, O. W., Thomas, D. K., 1999

机译：损伤对大块碳化硅氢原子诱导薄膜分离的影响。

INTRODUCTION OF HYDROGEN INTO BULK SILICON DURING PLASMA TREATMENTS USING A STOP LAYER FORMED BY ION IMPLANTATION

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