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首页> 外文会议>European Photovoltaic Solar Energy Conference; 20060904-08; Dresden(DE) >Spectroscopic and electrical characterization of gettering effect in p- and n-type multi-crystalline silicon
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Spectroscopic and electrical characterization of gettering effect in p- and n-type multi-crystalline silicon

机译：p型和n型多晶硅中吸杂效应的光谱和电学表征

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摘要

The increase of the average lifetime in silicon multicrystalline wafers at the end of the cell fabrication process shows that, like in p-type materials, also in n-type materials the average quality can be improved by suitable gettering and passivation treatments. However, it was already reported that different parts of p-doped ingots react in different way to the gettering procedures. In this paper we report on the effect of the phosphorus (P)-gettering process (45 Ohm/sq P-diffusion) on n- and p-type me Si in order to get more information about the physics of the gettering process in both materials. The detailed analysis of the electrical activity of microstructural defects shows that grain boundaries and precipitates are the more detrimental defects, even if they do not deteriorate the average good quality of the material and the final cell performance. No intragranular electrical active defects could be detected in the EBIC maps at room temperature. Finally, despite the formation of precipitates at grain boundaries, the average diffusion lengths in n-type samples are larger than in p-type samples prepared in similar conditions, confirming that n-type-Si is less sensitive to metallic impurities.
机译：电池制造过程结束时，硅多晶晶片的平均寿命增加表明，与p型材料一样，在n型材料中，平均质量也可以通过适当的吸气和钝化处理得到改善。然而，已经报道，p掺杂的铸锭的不同部分对吸杂过程的反应方式不同。在本文中，我们报告了磷（P）吸杂过程（45 Ohm / sq P扩散）对n型和p型me Si的影响，以便获得有关这两种吸杂过程的物理信息。材料。对微结构缺陷的电活动的详细分析表明，晶界和析出物是更具危害性的缺陷，即使它们不会破坏材料的平均良好质量和最终的电池性能。在室温下，EBIC图中未检测到晶内电活性缺陷。最后，尽管在晶界形成了沉淀物，但是在类似条件下制备的n型样品中的平均扩散长度要大于在相似条件下制备的p型样品中的平均扩散长度，这证实了n型Si对金属杂质的敏感性较低。

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