首页> 外文会议>European Photovoltaic Solar Energy Conference; 20060904-08; Dresden(DE) >OPTIMISATION AND EFFICIENCY LIMITS OF AMORPHOUS SILICON/AMORPHOUS SILICON GERMANIUM/MICROCRYSTALLINE SILICON TRIPLE-JUNCTION SOLAR CELL
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OPTIMISATION AND EFFICIENCY LIMITS OF AMORPHOUS SILICON/AMORPHOUS SILICON GERMANIUM/MICROCRYSTALLINE SILICON TRIPLE-JUNCTION SOLAR CELL

机译:非晶硅/非晶硅锗/微晶硅三结太阳能电池的优化及效率极限

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摘要

Optical and electrical analysis and optimisation of an amorphous silicon/amorphous silicon germanium/microcrystalline silicon based triple-junction solar cell are carried out using numerical simulations. Improvements in optical and electrical properties are investigated in order to achieve a record-high conversion efficiency of the solar cell. A potential for achieving short-circuit current ~ 11 mA/cm~2 is indicated for the optimised cell structure. Optical simulations show that a broad angular distribution function of scattered light at textured interfaces is an important parameter to achieve high photocurrent in the top and bottom cell. Sufficiently thick amorphous silicon germanium layer has to be used (> 250 nm) to assure the high photocurrent of the middle cell. The potential for achieving the conversion efficiency over 17 % of the solar cell is demonstrated by optimising electrical properties of the layers and interfaces (larger bandgap of the p-doped layer, introducing buffer layers).
机译:使用数值模拟对基于非晶硅/非晶硅锗/微晶硅的三结太阳能电池进行了光电分析和优化。为了实现太阳能电池的创纪录的高转换效率,研究了光学和电学性质的改善。对于优化的电池结构,指出了达到短路电流〜11 mA / cm〜2的电位。光学模拟表明,在纹理界面处散射光的宽角度分布函数是在顶部和底部电池中实现高光电流的重要参数。必须使用足够厚的非晶硅锗层(> 250 nm),以确保中间电池的高光电流。通过优化层和界面的电性能(p掺杂层的较大带隙,引入缓冲层),证明了实现超过17%的太阳能电池转换效率的潜力。

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