EUV process establishment through litho and etch for N7 node

著录项

• 来源
  《Extreme ultraviolet (EUV) lithography VII》|2016年|97760C.1-97760C.7|共7页
• 会议地点 San Jose CA(US)
• 作者

  Yuhei Kuwahara; Shinichiro Kawakami; Minoru Kubota; Koichi Matsunag; Kathleen Nafus; Philippe Foubert; Ming Mao;

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• 作者单位

  Tokyo Electron Kyushu Ltd., 1-1 Fukuhara, Koshi city, Kumamoto, 861-1116, Japan;

  Tokyo Electron Kyushu Ltd., 1-1 Fukuhara, Koshi city, Kumamoto, 861-1116, Japan;

  Tokyo Electron Kyushu Ltd., 1-1 Fukuhara, Koshi city, Kumamoto, 861-1116, Japan;

  Tokyo Electron Kyushu Ltd., 1-1 Fukuhara, Koshi city, Kumamoto, 861-1116, Japan;

  Tokyo Electron Kyushu Ltd., 1-1 Fukuhara, Koshi city, Kumamoto, 861-1116, Japan;

  imec, Kapeldreef 75, B-3001, Leuven, Belgium;

  imec, Kapeldreef 75, B-3001, Leuven, Belgium;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  This paper reports on post-litho CDU improvement by litho process optimization and also post-etch LWR reduction by litho and etch process optimization. EUVL; 16nm half pitch; CD uniformity; LWR/LER; through litho and etch;

  机译：本文报道了通过光刻工艺优化进行的光刻后CDU改进，以及通过光刻和蚀刻工艺优化进行的蚀刻后LWR降低。 EUVL； 16nm半间距CD均匀性； LWR / LER;通过光刻和蚀刻;