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首页> 外文会议>Ferroelectric Thin Films XII >Sample Geometry Effects on Electric-Field-Induced Displacements in Piezoelectric Thin Films Measured by Atomic Force Microscopy
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Sample Geometry Effects on Electric-Field-Induced Displacements in Piezoelectric Thin Films Measured by Atomic Force Microscopy

机译：样品几何形状对通过原子力显微镜测量的压电薄膜中电场感应位移的影响

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摘要

Electric-field-induced displacements of PZT film capacitor Pt/PZT(5μm)/Pt/SiO_2/Si(100) were calculated by finite element method with various parameters of sample geometry: the diameter of top electrode φ_(TE) ranging from 0.2 μm to 1000 μm and whether PZT film was continuous or side-etched. If φ_(TE) was larger than 40 μm, surface longitudinal displacement (corresponding to AFM-measured strain) was not equal to net longitudinal displacement of PZT film, including a contribution of the bending motion of substrate. In contrast, if φ_(TE) was smaller than 4 μm and PZT film was continuous, effective d_(33) evaluated from net longitudinal displacement was smaller than intrinsic d_(33), because the side PZT film clamped the edge of the capacitor disk and prevented the whole disk from elongating longitudinally. It was also revealed that d_(33) value calculated from net longitudinal displacement of PZT film depended on the Poisson's ratio of PZT and was not equal to intrinsic d_(33), excluding the case that φ_(TE) was smaller than 4 μm and PZT film was side-etched. In conclusion, it is suggested that smaller φ_(TE) (< 4 μm, in our case) and side-etch treatment permit a precision measurement of d_(33); however this condition is difficult to be satisfied experimentally.
机译：利用有限元方法，利用样品几何结构的各种参数，通过电场计算PZT薄膜电容器Pt / PZT（5μm）/ Pt / SiO_2 / Si（100）的电场位移：上电极的直径φ_（TE）为0.2 μm至1000μm，以及PZT膜是连续蚀刻还是侧面蚀刻。如果φ_（TE）大于40μm，则表面纵向位移（对应于AFM测量的应变）不等于PZT膜的净纵向位移，包括基板弯曲运动的贡献。相反，如果φ_（TE）小于4μm并且PZT膜是连续的，则从净纵向位移评估的有效d_（33）小于固有d_（33），因为侧面PZT膜夹住了电容器盘的边缘并防止整个圆盘纵向伸长。还揭示出，由PZT膜的净纵向位移计算出的d_（33）值取决于PZT的泊松比，并且不等于固有d_（33），除了φ_（TE）小于4μm和PZT膜被侧蚀刻。总之，建议较小的φ_（TE）（在我们的情况下为<4μm）和侧面蚀刻处理可以实现d_（33）的精确测量。但是，通过实验很难满足该条件。

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