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Residual Stress Effects in Ferroelectric Thin Films

机译：铁电薄膜中的残余应力效应

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Recent developments in soft lithographic patterning enable the integration of functional ceramic thin films on a chip, rather than by adding discrete components to the system. As integrated device applications push the characteristic length scale of materials smaller and smaller, surface and interface effects play an important role, producing significant scientific-challenges to the characterization of mechanical properties, performance and reliability. In this paper, we investigate the complex roles of microstructure, interface effects and residual stresses on ferroelectric thin film performance. Pb(Zr_(0.53)Ti_(0.47))O_3 films ranging in thickness from 190 nm to 500 nm were deposited by a sequential build up of sol-gel derived thin layers onto platinized Si substrates. Residual stresses in the films after thermal processing were observed and calculated from laser reflectance measurements of wafer curvature. Field-induced displacements were then measured by interferometric methods for films with well-characterized residual stress states. Results indicate significant increases in film performance with a decrease in measured residual tensile stress.
机译：软光刻图案化的最新发展实现了功能陶瓷薄膜在芯片上的集成，而不是通过向系统中添加分立组件来实现。随着集成设备应用的不断发展，材料的特征长度尺度越来越小，表面和界面效应起着重要作用，对表征机械性能，性能和可靠性产生了重大的科学挑战。在本文中，我们研究了微观结构，界面效应和残余应力对铁电薄膜性能的复杂作用。通过将溶胶-凝胶衍生的薄层顺序沉积在镀铂的Si衬底上，沉积厚度范围为190 nm至500 nm的Pb（Zr_（0.53）Ti_（0.47））O_3膜。观察热处理后膜中的残余应力，并根据晶片曲率的激光反射率测量结果计算出残余应力。然后通过干涉法对具有充分表征的残余应力状态的薄膜测量场致位移。结果表明膜性能显着提高，同时测得的残余拉伸应力降低。

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