PHOTOLUMINESCENCE STUDY OF INTERFACE DEFECTS IN BONDED SILICON WAFERS

机译：硅键合晶片界面缺陷的光致发光研究

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A new photoluminescence technique has been applied to non-destructively image defects at the bonded interface in thick silicon-on-insulator (SOI) and silicon-silicon (Si-Si) bonded wafers. In SOI, the detection and mapping of microvoids was possible with high resolution, confirmed by optical and scanning electron microscopy. In Si-Si, the method was used to compare the interface quality for three different hydrophilic and hydrophobic pre-bond cleans. Transmission electron microscopy and energy dispersive X-ray spectroscopy were used to identify the nature of the observed defects. The results were correlated with SIMS and spreading resistance measurements across the interface, showing that the electrical properties and generated defect type are related to the chemical composition of the interface at join.

机译：一种新的光致发光技术已应用于厚绝缘体上硅（SOI）和硅-硅（Si-Si）粘合晶片的粘合界面处的非破坏性图像缺陷。在SOI中，通过光学和扫描电子显微镜确认，可以以高分辨率检测和绘制微孔。在Si-Si中，该方法用于比较三种不同的亲水性和疏水性预粘结清洗剂的界面质量。透射电子显微镜和能量色散X射线光谱学被用来识别观察到的缺陷的性质。结果与SIMS和界面上的电阻分布相关联，表明电性能和生成的缺陷类型与连接时界面的化学组成有关。

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来源
《Fifth International Symposium on Semiconductor Wafer Bonding, 5th, Oct 1999, Honolulu》|1999年|p.187-194|共8页
会议地点 Honolulu HI(US)
作者
W.A. Nevin; D.L. Gay; S. Blackstone; V. Higgs;
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作者单位

BCO Technologies (NI) Ltd., 5 Hannahstown Hill, Belfast, BT17 OLT, N. Ireland;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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PHOTOLUMINESCENCE STUDY OF INTERFACE DEFECTS IN BONDED SILICON WAFERS

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