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首页> 外文会议>Film silicon science and technology >Employing μc-SiO_x:H as n-Type Layer and Back TCO Replacement for High-Efficiency a-Si:H/μc-Si:H Tandem Solar Cells
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Employing μc-SiO_x:H as n-Type Layer and Back TCO Replacement for High-Efficiency a-Si:H/μc-Si:H Tandem Solar Cells

机译：采用μc-SiO_x：H作为n型层并采用背面TCO替代技术来生产高效a-Si：H /μc-Si：H串联太阳能电池

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摘要

The n-type hydrogenated microcrystalline silicon oxide (μc-SiOx:H(n)) films with different stoichiometry have been successfully prepared by varying the CO_2-to-SiH_4 flow ratio in the PECVD system. By using the μc-SiO_x:H(n) as a replacement for μc-Si:H(n) and ITO, the conversion efficiency of μc-Si:H single-junction and a-Si:H/μc-Si:H tandem cells were improved to 6.35% and 10.15%, respectively. The major improvement of the short circuit current density (J_(SC)) and these cell efficiencies were originated from the increased optical absorption, which was confirmed by the quantum efficiency measurement showing increased response in the long-wavelength region. Moreover, the all PECVD process except the metal contact simplified the fabrication and might benefit the industrial production.
机译：通过改变PECVD系统中CO_2与SiH_4的流量比，成功制备了化学计量不同的n型氢化微晶硅薄膜（μc-SiOx：H（n））。通过使用μc-SiO_x：H（n）替代μc-Si：H（n）和ITO，μc-Si：H单结和a-Si：H /μc-Si：H的转换效率串联细胞分别提高到6.35％和10.15％。短路电流密度（J_（SC））和这些电池效率的主要提高源自光吸收的增加，这通过量子效率测量得到证实，该测量显示出在长波长区域中响应增加。此外，除金属接触之外的所有PECVD工艺都简化了制造过程，并可能有益于工业生产。

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  • 会议地点 San Francisco CA(US)
  • 作者

    S.W. Liang; C.H. Hsu; Y.W. Tseng; Y.P. Lin; C.C. Tsai;

  • 作者单位

    Department of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan;

    Department of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan;

    Department of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan;

    Department of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan;

    Department of Photonics, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan;

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