首页> 外文会议>Fourth International Conference on Single Crystal Growth and Heat amp; Mass Transfer (ICSC - 2001) Vol.4; Sep 24-28, 2001; Obninsk, Russia >SIMULATION OF CONVECTIVE TRANSFER OF OXYGEN AT GROWTH OF CRYSTALS OF SILICON BY CZOCHRALSKI METHOD
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SIMULATION OF CONVECTIVE TRANSFER OF OXYGEN AT GROWTH OF CRYSTALS OF SILICON BY CZOCHRALSKI METHOD

机译:直拉法模拟硅晶体生长过程中氧的对流传递

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摘要

The mathematical model and code for calculation of processes of silicon crystals growth by Czoehralski method taking into account forced, thermogravitational and thermocapillary convection, and also conductive and radiation heat exchange is developed. The calculations of convection transfer of oxygen impurity are carried out at action of all kinds of convection separately, and in various combinations.
机译:开发了用Czoehralski方法计算硅晶体生长过程的数学模型和代码,该模型考虑了强制,热引力和热毛细对流以及传导和辐射热交换。氧杂质的对流转移的计算是分别在各种对流的作用下进行的,并且以各种组合进行。

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