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首页> 外文会议>Fourth International Conference on Solid State Lighting >Growth and characterization of blue and near-ultraviolet light-emitting diodes on bulk GaN
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Growth and characterization of blue and near-ultraviolet light-emitting diodes on bulk GaN

机译：块状GaN上蓝色和近紫外发光二极管的生长和表征

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摘要

Blue and near-ultraviolet (UV) InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) were grown on GaN and sapphire substrates using metalorganic chemical vapor deposition. The homoepitaxial LEDs exhibited greatly improved microstructural and electrical properties compared to the devices grown on sapphire. As a result of defect reduction, the reverse-bias leakage current was reduced by more than six orders of magnitude. At forward bias, thermally activated current rather than carrier tunneling was dominant in the LEDs on GaN. The improvement of optical characteristics was found to be a strong function of In content in the active region. At low and intermediate injection levels, the internal quantum efficiency of the UV LED on GaN was much higher compared to that on sapphire, whereas the performance of the blue LEDs was found to be comparable. At high injection currents, both the blue and UV LEDs on GaN greatly outperformed their counterparts on sapphire. The homoepitaxial LEDs with a vertical geometry had a much smaller series resistance and were capable of operating at 600 A/cm~2 in cw mode due to uniform current spreading and efficient heat dissipation.
机译：使用金属有机化学气相沉积法，在GaN和蓝宝石衬底上生长了蓝色和近紫外（UV）InGaN / GaN多量子阱发光二极管（LED）。与在蓝宝石上生长的器件相比，同质外延LED表现出大大改善的微结构和电性能。减少缺陷的结果是，反向偏置泄漏电流降低了六个数量级以上。在正向偏置下，GaN上的LED中占主导地位的是热激活电流而不是载流子隧穿。发现光学特性的改善是活性区域中In含量的强函数。在中低注入水平下，GaN上的UV LED的内部量子效率比蓝宝石上的高，而蓝色LED的性能却相当。在高注入电流下，GaN上的蓝色和紫外LED都大大优于蓝宝石上的它们。具有垂直几何形状的同质外延LED具有较小的串联电阻，并且由于均匀的电流分布和有效的散热能力，能够以cw模式在600 A / cm〜2的条件下工作。

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