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首页> 外文会议>International Conference on Solid State Lighting >Growth and characterization of blue and near-ultraviolet light-emitting diodes on bulk GaN
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Growth and characterization of blue and near-ultraviolet light-emitting diodes on bulk GaN

机译：蓝色和近紫外线发光二极管对散装GaN的生长和特征

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Blue and near-ultraviolet (UV) InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) were grown on GaN and sapphire substrates using metalorganic chemical vapor deposition. The homoepitaxial LEDs exhibited greatly improved microstructural and electrical properties compared to the devices grown on sapphire. As a result of defect reduction, the reverse-bias leakage current was reduced by more than six orders of magnitude. At forward bias, thermally activated current rather than carrier tunneling was dominant in the LEDs on GaN. The improvement of optical characteristics was found to be a strong function of In content in the active region. At low and intermediate injection levels, the internal quantum efficiency of the UV LED on GaN was much higher compared to that on sapphire, whereas the performance of the blue LEDs was found to be comparable. At high injection currents, both the blue and UV LEDs on GaN greatly outperformed their counterparts on sapphire. The homoepitaxial LEDs with a vertical geometry had a much smaller series resistance and were capable of operating at 600 A/cm~2 in cw mode due to uniform current spreading and efficient heat dissipation.
机译：使用金属化学气相沉积在GaN和蓝宝石基板上生长蓝色和近紫外（UV）IngaN / GaN多量子孔发光二极管（LED）。与在蓝宝石上生长的器件相比，同性记LED显得良好的微观结构和电气性能。由于降低缺陷，偏压漏电流减小了超过六个数量级。在正向偏置时，热激活的电流而不是载体隧道在GaN上的LED中占主导地位。发现光学特性的改善是活性区域中的含量的强函数。在较低和中间注入水平下，与蓝宝石相比，GaN上的UV LED的内部量子效率远高得多，而蓝光LED的性能被发现是可比的。在高喷射电流下，GaN上的蓝色和紫外线LED都非常超越蓝宝石对手。具有垂直几何形状的主页型LED具有更小的串联电阻，并且由于均匀的电流展开和有效的散热，能够在CW模式下在600A / cm〜2中操作。

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