• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Fourth International Conference on Solid State Lighting >Device Performance of AlGaN-based 240 - 300 nm deep UV LEDs
【24h】

Device Performance of AlGaN-based 240 - 300 nm deep UV LEDs

机译：基于AlGaN的240-300 nm深紫外LED的器件性能

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Deep ultraviolet light emitting diodes (LEDs) with emission wavelengths shorter than 300 nm have been grown by metalorganic vapor phase epitaxy. A bottom emitting LED design is used which requires a high-Al content Al_xGa_(1-x)N (x = 0.5 - 0.8 ) buffer layer which has sufficient conductivity and is transparent to the quantum well emission wavelength. LEDs were flip chip mounted to a silicon submount which provides for good thermal performance as well as improved light extraction. For large area 1 mm x 1 mm LEDs emitting at 297 nm, an output power as high as 2.25 mW under direct current operation has been demonstrated at 500 mA with a forward voltage of 12.5 volts. For shorter wavelength LEDs emitting at 276 nm, an output power as high as 1.3 mW has been demonstrated under direct current operation at 300 mA with a forward voltage of 9.2 volts. Recent improvements in heterostructure design have resulted in quantum well emission at 276 nm with a peak intensity that is 330 times stronger than the largest sub-bandgap peak. LEDs with emission wavelengths as short as 237 nm have also been demonstrated.
机译：通过金属有机气相外延生长了具有短于300nm的发射波长的深紫外发光二极管（LED）。使用底部发射LED设计，该设计需要高Al含量的Al_xGa_（1-x）N（x = 0.5-0.8）缓冲层，该缓冲层必须具有足够的导电性并且对于量子阱发射波长是透明的。将LED倒装芯片安装到硅基座上，该基座提供了良好的热性能并改善了光提取。对于在297 nm处发射的1 mm x 1 mm大面积LED，在直流电流操作下，在500 mA的正向电压为12.5伏时，输出功率高达2.25 mW。对于以276 nm发射的较短波长的LED，在300 mA的直流电流下，在9.2伏的正向电压下，已证明输出功率高达1.3 mW。异质结构设计的最新改进已导致276 nm的量子阱发射，其峰值强度比最大的子带隙峰强330倍。还已经证明了发射波长短至237 nm的LED。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号