Development of 230-270 nm AlGaN-Based Deep-UV LEDs

Hideki Hirayama; Tohru Yatabe; Norimichi Noguchi; Norihiko Kamata

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Development of 230-270 nm AlGaN-Based Deep-UV LEDs

机译：230-270 nm AlGaN基深紫外LED的开发

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High-brightness deep-ultraviolet (UV) light-emitting diodes (LEDs) or laser diodes (LDs) with emission wavelengths in the range 230-350 nm have a wide range of potential applications, such as in water purification, sterilization, medicine and biochemistry, white light illumination, and light sources for high density optical recording. AlGaN has a direct transition band gap between 3.4 and 6.2 eV and attractive for a material system to realize deep UV light emitters.rnIn this work, we demonstrated AlGaN multi quantum well (MQW) deep-UV LEDs with wavelengths in the range of 227.5-273 nm, fabricated on low threading dislocation density (TDD) A1N buffers formed through an ammonia (NH_3) pulse-flow multilayer (ML) growth technique.

机译：发射波长在230-350 nm范围内的高亮度深紫外（UV）发光二极管（LED）或激光二极管（LD）具有广泛的潜在应用，例如在水净化，消毒，医药和生物医学领域。生物化学，白光照明和用于高密度光学记录的光源。 AlGaN具有3.4到6.2 eV的直接跃迁带隙，对于实现深紫外光发射器的材料系统具有吸引力.rn在这项工作中，我们展示了波长为227.5-2.5 nm的AlGaN多量子阱（MQW）深紫外LED。 273 nm，在通过氨（NH_3）脉冲流多层（ML）生长技术形成的低螺纹位错密度（TDD）AlN缓冲液上制成。

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《電気学会論文誌 C:電子·情報·システム部門誌》 |2008年第5期|9|共1页
作者
Hideki Hirayama; Tohru Yatabe; Norimichi Noguchi; Norihiko Kamata;
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正文语种 eng
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deep-UV LED; AlGaN; AlN; quantum well;

机译：深紫外LED;氮化铝镓;AlN;量子阱;

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1. Development of 230-270 nm AlGaN-Based Deep-UV LEDs [J] . HIDEKI HIRAYAMA, TOHRU YATABE, NORIMICHI NOGUCHI, Electronics and communications in Japan . 2010,第3期

机译：230-270 nm AlGaN基深紫外LED的开发
2. Efficient Carrier Transport for AlGaN-Based Deep-UV LEDs With Graded Superlattice p-AlGaN [J] . Mondal Ramit Kumar, Chatterjee Vijay, Pal Suchandan IEEE Transactions on Electron Devices . 2020,第4期

机译：基于Algan的Deep-UV LED具有高效的载体运输，具有分级超晶格P-AlGaN
3. Recent Progress in AlGaN-Based Deep-UV LEDs [J] . HIDEKI HIRAYAMA, SACHIE FUJIKAWA, NORIHIKO KAMATA Electronics and communications in Japan . 2015,第5期

机译：基于AlGaN的深紫外LED的最新进展
4. Development of AlGaN-based deep-UV LEDs using high-quality AlN on sapphire [C] . 22nd IEEE International Semiconductor Laser Conference . 2010

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7. Development of 230-270 nm AlGaN-Based Deep UV LEDs [O] . Hideki Hirayama, Tohru Yatabe, Norimichi Noguchi, 2008

机译：开发230-270 NM algan基础紫外线LED
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Development of 230-270 nm AlGaN-Based Deep-UV LEDs

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