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首页> 外文会议>Fourth International Conference on Solid State Lighting >Study of short-term instabilities of InGaN/GaN light-emitting diodes by means of capacitance-voltage measurements and deep level transient spectroscopy
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Study of short-term instabilities of InGaN/GaN light-emitting diodes by means of capacitance-voltage measurements and deep level transient spectroscopy

机译：通过电容电压测量和深能级瞬态光谱研究InGaN / GaN发光二极管的短期不稳定性

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摘要

In this paper we present a combined current-voltage, capacitance-voltage, Deep Level Transient Spectroscopy and electroluminescence study of short-term instabilities of InGaN/GaN LEDs submitted to forward current aging tests at room temperature. In the early stages of the aging tests at low forward current levels (15-20 mA), LEDs present a decrease in optical power, which stabilizes within the first 50 hours and never exceeds 10% (measured at 20 mA). The spectral distribution of the electroluminescence intensity does not change with stress, while C-V profiles detect changes consisting in apparent doping and/or charge concentration increase within quantum wells. This increase is correlated with the decrease in optical power. Capacitance Deep Level Transient Spectroscopy has been carried out to clarify the DC aging induced generation/modification of the energy levels present in the devices. Remarkable changes occur after the stress, which can be related to the doping/charge variation and thus to the efficiency loss.
机译：在本文中，我们提出了电流-电压，电容-电压，深层瞬态光谱和电致发光的组合研究，这些研究对InGaN / GaN LED的短期不稳定性进行了室温正向电流老化测试。在低正向电流水平（15-20 mA）下的老化测试的早期阶段，LED的光功率会降低，在前50个小时内会稳定下来，并且永远不会超过10％（以20 mA测量）。电致发光强度的光谱分布不会随应力而变化，而C-V曲线可检测到量子阱中表观掺杂和/或电荷浓度增加的变化。这种增加与光功率的减少相关。已经进行了电容深电平瞬态光谱分析，以阐明直流老化引起的设备中存在的能级的产生/修改。应力后会发生显着变化，这可能与掺杂/电荷变化有关，从而与效率损失有关。

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