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首页> 外文会议>Fracture and strength of solids VII >Surface Hardening of Aluminium-Copper Alloy 2011 by RF Plasma Nitriding Process
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Surface Hardening of Aluminium-Copper Alloy 2011 by RF Plasma Nitriding Process

机译：射频等离子渗氮工艺对铝铜合金2011的表面硬化

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In this work, an inductively-coupled rf plasma reactor was utilized in the nitriding process for surface hardness improvement of aluminium-copper alloy 2011. Substrate bias at 400V was used in the pre-sputtering step to eliminate the aluminium oxide on the samples. Plasma nitriding was carried out in a N_2-H_2 admixture at total pressure of 1 torr. The process length was varied from 9 to 36 hours while the input rf power and substrate temperature were varied from 100 to 300 W and kept at 400 ℃, respectively. A negative bias voltage up to 400 V was used in the nitriding process. Glancing incident-angle x-ray diffraction (GIXRD) results showed the hexagonal crystal structure of A1N on samples. The roughness increased slightly when the voltage increase up to 400V and was investigated by Scanning Electron Micrograph (SEM). Electron Probe Microscopy Analysis (EPMA) and Energy Dispersive X-ray Analysis (EDX) were used to detect the N atoms in specimens. Significant increases of surface hardness are observed after plasma nitriding.
机译：在这项工作中，感应耦合射频等离子体反应器在氮化工艺中用于改善铝铜合金2011的表面硬度。在预溅射步骤中使用400V的衬底偏压以消除样品上的氧化铝。在N_2-H_2混合物中以1托的总压力进行等离子体氮化。工艺时间从9到36小时不等，而输入射频功率和基板温度从100到300 W不等，并保持在400℃。在氮化过程中使用了高达400 V的负偏置电压。掠射角X射线衍射（GIXRD）结果显示出样品中AlN的六方晶体结构。当电压增加到400V时，粗糙度略有增加，并通过扫描电子显微镜（SEM）进行了研究。电子探针显微镜分析（EPMA）和能量色散X射线分析（EDX）用于检测样品中的N原子。等离子体氮化后，表面硬度显着增加。

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