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C_(60)/C_(60)- Redox couple as a probe in the Determination of Fermi Level of Semiconductor Nanoparticles

机译:C_(60)/ C_(60)-氧化还原对作为探针测定半导体纳米粒子的费米能级

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摘要

The interface between bulk semiconductor and the metal is quite well understood. The formation of a space charge layer at the semiconductor-metal interface improves charge separation under bandgap excitation. However, the mere dimension of the semiconductor nanoparticles makes it difficult to extrapolate such a space charge model on the nanoscale. Metal nanoparticles or islands deposited on semiconductor surface play an important role in catalyzing interfacial charge transfer process. For example, in our earlier work a 3-5 fold improvement in the photoelectrochemical performance of nanostructured TiO_2 films was achieved by coupling them with noble metal nanoparticles. This observation also parallels the studies of Nakato and coworkers who reported an enhancement in the photovoltage by deposition of metal islands on single crystal semiconductors. Despite a large number of investigations reported in the literature, the factors responsible for improved performance in metal-semiconductor nanocomposites are yet to be understood fully.
机译:块状半导体与金属之间的界面已广为人知。在半导体-金属界面处形成空间电荷层改善了带隙激发下的电荷分离。然而,半导体纳米颗粒的仅仅尺寸使得难以在纳米级上推断出这种空间电荷模型。沉积在半导体表面上的金属纳米颗粒或岛在催化界面电荷转移过程中起着重要作用。例如,在我们较早的工作中,通过将纳米结构的TiO_2薄膜与贵金属纳米粒子偶联,可以将光电化学性能提高3-5倍。这一发现也与Nakato及其同事的研究相似,他们报告了通过在单晶半导体上沉积金属岛而提高了光电压。尽管文献中进行了大量的研究,但导致金属-半导体纳米复合材料性能提高的因素尚待充分理解。

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