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Photocathode electron beam sources using GaN and InGaN with NEA surface

机译：使用具有NEA表面的GaN和InGaN的光电阴极电子束源

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摘要

A photocathode electron source using p-type GaN and p-type InGaN semiconductors with a negative electron affinity (NEA) surface has been studied for its ability to maintain an extended NEA state. The key technology of NEA photocathodes is the formation of electric dipoles by atoms on the surface, which makes it possible for photo excited electrons in the conduction band minimum to escape into the vacuum. This means that in order to keep the electron energy spread as small as possible, the excitation photon energy should be tuned to the band gap energy. However, the NEA surface is damaged by the adsorption of residual gas and the back-bombardment of ionized residual gas by photoelectrons. The p-type GaN and InGaN semiconductors were measured a lifetime of quantum yield of excitation energy corresponding to the band gap energy in comparison to the p-type GaAs as the conventional NEA photocathode. Lifetime of NEA-photocathodes using the GaN and InGaN were 21 times and 7.7 times longer respectively than that using the GaAs.
机译：已经研究了使用具有负电子亲和力（NEA）表面的p型GaN和p型InGaN半导体的光电阴极电子源，其能够保持扩展的NEA状态。 NEA光电阴极的关键技术是由表面上的原子形成电偶极子，这使导带中最小的光激发电子逃逸到真空中成为可能。这意味着，为了使电子能量扩散尽可能小，应将激发光子能量调整为带隙能量。但是，NEA表面会因残留气体的吸附和光电子对电离残留气体的反撞而损坏。与作为常规NEA光电阴极的p型GaAs相比，测量了p型GaN和InGaN半导体的与带隙能量相对应的激发能的量子产率。使用GaN和InGaN的NEA光电阴极的寿命分别比使用GaAs的寿命长21倍和7.7倍。

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  • 来源
    《Gallium nitride materials and devices X》|2015年|93630T.1-93630T.8|共8页
  • 会议地点 San Francisco CA(US)
  • 作者

    T. Nishitani; T. Maekawa; M. Tabuchi; T. Meguro; Y. Honda; H. Amano;

  • 作者单位

    Synchrotron Radiation Research Center, Nagoya Univ., Furo-cho, Nagoya, Aichi, Japan 464-8603;

    Dept. of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya Univ., Furo-cho, Nagoya, Aichi, Japan 464-8603;

    Synchrotron Radiation Research Center, Nagoya Univ., Furo-cho, Nagoya, Aichi, Japan 464-8603;

    Dept. of Physics, Faculty of Science Division Ⅱ, Tokyo Univ. of Science, 1-3 Kagurazaka, Shinjuku, Tokyo, Japan 162-8601;

    Dept. of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya Univ., Furo-cho, Nagoya, Aichi, Japan 464-8603;

    Dept. of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya Univ., Furo-cho, Nagoya, Aichi, Japan 464-8603;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Photocathode; NEA surface; Electron beam; GaN; InGaN;

    机译：光电阴极; NEA表面；电子束;氮化镓;氮化铟镓;

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