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Current spreading in UV-C LEDs emitting around 235 nm

机译：发射约235 nm的UV-C LED中的电流扩散

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摘要

We present UV-C LEDs emitting around 235 nm grown by MOVPE on ELO AlN/sapphire substrates. In order to account for the low conductivity of high Al content AlGaN layers and the associated high contact resistances, we designed an optimized compact LED geometry based on electro-thermal simulations of the current spreading. Experimental data (layer and contact resistances) are collected on test structures and used as input parameters for 3-D current spreading simulations. With resistances of the layers (n and p) approaching 0.1 Ωcm, the use of a segmented p-area with broad n-contact fingers (10 μm or more) that are close to the mesa edge (5 μm) help to maximize the emission power in the center of the structure. Based on this knowledge a series of compact LEDs of size 500 μm × 500 μm is designed and simulated. We get confirmation that the segmentation of the p-area is the most critical parameter to limit the non-uniformity introduced by the high n-sheet resistances. Up to 17% in emission power can be gained when the n-contacts are designed properly. LEDs with the optimum geometry were processed and measured. We get a good confirmation of our model concerning the distribution of the emission power. Both simulations and measurements show current crowding at the edge of the n-contact, however the power loss in the middle of the chip is higher than predicted.
机译：我们介绍了MOVPE在ELO AlN /蓝宝石衬底上生长的235 nm左右的UV-C LED。为了解决高Al含量的AlGaN层的低电导率和相关的高接触电阻的问题，我们基于电流分布的电热模拟设计了一种优化的紧凑型LED几何形状。在测试结构上收集实验数据（层电阻和接触电阻），并将其用作3-D电流扩展仿真的输入参数。随着层（n和p）的电阻接近0.1Ωcm，使用具有接近台面边缘（5μm）的宽n接触指（10μm或更大）的分段p区域有助于最大化发射力量在结构的中心。基于此知识，设计并模拟了一系列尺寸为500μm×500μm的紧凑型LED。我们得到证实，p区域的分割是限制高n-sheet电阻引入的不均匀性的最关键参数。如果正确设计n触点，则可获得高达17％的发射功率。对具有最佳几何形状的LED进行了处理和测量。我们很好地证实了我们关于发射功率分布的模型。仿真和测量均显示电流在n触点的边缘拥挤，但是芯片中间的功率损耗高于预期。

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  • 来源
    《Gallium nitride materials and devices X》|2015年|93631P.1-93631P.15|共15页
  • 会议地点 San Francisco CA(US)
  • 作者

    Mickael Lapeyrade; Florian Eberspach; Johannes Glaab; Neysha Lobo-Ploch; Christoph Reich; Christian Kuhn; Martin Guttmann; Tim Wernicke; Frank Mehnke; Sven Einfeldt; Arne Knauer; Markus Weyers; Michael Kneissl;

  • 作者单位

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany;

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany;

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany;

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany;

    TechnischeUniversitaet Berlin, Institut fuer Festkoerperphysik, Hardenbergstr. 36, EW 6-1, 10623, Berlin, Germany;

    TechnischeUniversitaet Berlin, Institut fuer Festkoerperphysik, Hardenbergstr. 36, EW 6-1, 10623, Berlin, Germany;

    TechnischeUniversitaet Berlin, Institut fuer Festkoerperphysik, Hardenbergstr. 36, EW 6-1, 10623, Berlin, Germany;

    TechnischeUniversitaet Berlin, Institut fuer Festkoerperphysik, Hardenbergstr. 36, EW 6-1, 10623, Berlin, Germany;

    TechnischeUniversitaet Berlin, Institut fuer Festkoerperphysik, Hardenbergstr. 36, EW 6-1, 10623, Berlin, Germany;

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany;

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany;

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany;

    Ferdinand-Braun-Institut, Leibniz-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany,TechnischeUniversitaet Berlin, Institut fuer Festkoerperphysik, Hardenbergstr. 36, EW 6-1, 10623, Berlin, Germany;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    UV-C LED; geometry; AlGaN; current spreading; MOVPE; ELO AlN/sapphire;

    机译：UV-C LED;几何;氮化铝镓;电流扩散； MOVPE； ELO AlN /蓝宝石;

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