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Efficiency droop in nitride LEDs revisited: Impact of excitonic recombination processes

机译:重新审视氮化物LED的效率下降:激子复合过程的影响

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The efficiency droop in nitride LEDs is currently attributed to either carrier-density-dependent nonradiative recombination or to carrier leakage, both being discussed in terms of a single-particle picture. Our time-resolved photoluminescence results show that the radiative lifetime is independent of carrier density, while the nonradiative lifetime scales with the inverse of the carrier density. This can not be understood in a single-particle model. By means of a many-particle theory approach we obtain a consistent picture with both radiative and Auger recombination enhanced by excitonic electron-hole correlation. In the high carrier density limit single-particle radiative and Auger recombination are recovered.
机译:氮化物LED的效率下降目前归因于与载流子密度有关的非辐射复合或归因于载流子泄漏,两者均以单粒子图像的形式进行了讨论。我们的时间分辨光致发光结果表明,辐射寿命与载流子密度无关,而非辐射寿命与载流子密度成反比。这在单粒子模型中无法理解。借助多粒子理论方法,我们获得了由激子电子-空穴相关增强的辐射和俄歇复合的一致图像。在高载流子密度极限中,恢复了单粒子辐射和俄歇复合。

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