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首页> 外文会议>Gallium nitride materials and devices X >Optical properties of small GaN/Al_(0.5)Ga_(0.5)N quantum dots grown on (11-22) GaN templates
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Optical properties of small GaN/Al_(0.5)Ga_(0.5)N quantum dots grown on (11-22) GaN templates

机译：在（11-22）GaN模板上生长的小GaN / Al_（0.5）Ga_（0.5）N量子点的光学性质

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摘要

GaN/Al_(0.5)Ga_(0.5)N quantum dots deposited on the (11-22) plane have been grown by combining Molecular Beam Epitaxy (MBE) and Metal Organic Vapor Phase Epitaxy (MOVPE). The (11-22) GaN oriented template was realized by MOVPE starting from a M-plane oriented sapphire substrate. The average dot sizes are the following: between 15 and 20 nm in the <-1-123> and <1-100> directions and a height ranging between 0.8 and 1.4 nm. Their density is ranging between 2 and 8×10~(10)cm~(-2). The crystal field splitting is measured in Al_(0.5)Ga_(0.5)N via polarized microphotoluminescence. We study the photoluminescence properties of small quantum dots which present innovative optical properties among which are the evolution of the polarization of the emitted photons at different temperatures. We also analyze the distortion of the photoluminescence at different time delays after the excitation pulse. A redshift is found that is attributed to the complex thermally-induced delocalization of the carriers through the assembly of dots from the smaller ones to the bigger ones.
机译：通过结合分子束外延（MBE）和金属有机气相外延（MOVPE）来生长沉积在（11-22）面上的GaN / Al_（0.5）Ga_（0.5）N量子点。 （11-22）GaN取向模板是通过MOVPE从M平面取向的蓝宝石衬底开始实现的。平均点的大小如下：在<-1-123>和<1-100>方向上介于15和20 nm之间，高度在0.8和1.4 nm之间。它们的密度在2到8×10〜（10）cm〜（-2）之间。通过偏振微光致发光在Al_（0.5）Ga_（0.5）N中测量晶体场分裂。我们研究了具有创新光学特性的小量子点的光致发光特性，其中包括在不同温度下发射的光子的极化演化。我们还分析了激发脉冲后不同时间延迟的光致发光畸变。发现了红移，这归因于通过点的组装从较小的点到较大的点而使载流子复杂地热诱导离域。

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  • 来源
    《Gallium nitride materials and devices X》|2015年|93630Z.1-93630Z.8|共8页
  • 会议地点 San Francisco CA(US)
  • 作者

    Julien Selles; Daniel Rosales; Bernard Gil; Guillaume Cassabois; Thierry Guillet; Julien Brault; Benjamin Damilano; Philippe Vennegues; Philippe de Mierry; Jean Massies;

  • 作者单位

    Laboratoire Charles Coulomb, CNRS-INP-UMR 5221, Universite Montpellier 2, F-34095 Montpellier, France,Universite Montpellier 2, Laboratoire Charles Coulomb, UMR 5221, F-34095 Montpellier, France;

    Laboratoire Charles Coulomb, CNRS-INP-UMR 5221, Universite Montpellier 2, F-34095 Montpellier, France,Universite Montpellier 2, Laboratoire Charles Coulomb, UMR 5221, F-34095 Montpellier, France;

    Laboratoire Charles Coulomb, CNRS-INP-UMR 5221, Universite Montpellier 2, F-34095 Montpellier, France,Universite Montpellier 2, Laboratoire Charles Coulomb, UMR 5221, F-34095 Montpellier, France;

    Laboratoire Charles Coulomb, CNRS-INP-UMR 5221, Universite Montpellier 2, F-34095 Montpellier, France,Universite Montpellier 2, Laboratoire Charles Coulomb, UMR 5221, F-34095 Montpellier, France;

    Laboratoire Charles Coulomb, CNRS-INP-UMR 5221, Universite Montpellier 2, F-34095 Montpellier, France,Universite Montpellier 2, Laboratoire Charles Coulomb, UMR 5221, F-34095 Montpellier, France;

    Centre de Recherche sur l'Hetero-Epitaxie et Applications, Rue Bernard Gregory, 06560 Valbonne, France;

    Centre de Recherche sur l'Hetero-Epitaxie et Applications, Rue Bernard Gregory, 06560 Valbonne, France;

    Centre de Recherche sur l'Hetero-Epitaxie et Applications, Rue Bernard Gregory, 06560 Valbonne, France;

    Centre de Recherche sur l'Hetero-Epitaxie et Applications, Rue Bernard Gregory, 06560 Valbonne, France;

    Centre de Recherche sur l'Hetero-Epitaxie et Applications, Rue Bernard Gregory, 06560 Valbonne, France;

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  • 正文语种 eng
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  • 关键词

    GaN; AlGaN; self-assembled nanostructures; molecular beam epitaxy; polar and semi-polar orientations; quantum confined Stark effect; UV LEDs;

    机译：氮化镓;氮化铝镓;自组装纳米结构；分子束外延极性和半极性方向；量子约束斯塔克效应；紫外线LED;

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