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InGaN Power Laser Chips in a Novel 50W Multi-Die Package

机译：采用新型50W多管芯封装的InGaN功率激光芯片

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In this paper we report recent developments on high power blue laser chips. Reduction of internal losses as well as optimized thermal management had been essential to increase optical output power. R&D samples with average performance of 3W optical output at junction temperatures of 130℃ are demonstrated. The chips are suitable for use in a novel multi chip housing: For the first time up to 20 blue laser chips have been packaged into one compact housing resulting in the first InGaN laser device with optical output ＞ 50W. The highly integrated package offers a unique small size. The outer dimensions of the package are 25.5mm × 35mm with an emitting surface of 16mm × 16.5mm. Therefore the complexity of optical alignment is dramatically reduced and only a single sheet multi lens array is required for beam collimation. Besides the unique technical performance the multi-die package offers significantly lower assembly costs because of the reduced complexity and assembly time. The butterfly package contains 4 bars with up to 5 multimode laser chips in series connection on each bar operating at 2.3A. The typical module wavelength is 450nm +/- 10nm. At a case temperature of 50℃ the R&D samples achieve efficiencies of typ. 30% and an optical output power of 50W corresponding to an electrical power consumption of ～165W. This new technology can be used for high performance light engines of high brightness projectors.
机译：在本文中，我们报告了高功率蓝色激光芯片的最新发展。减少内部损耗以及优化热管理对于增加光输出功率至关重要。展示了在结温为130℃时具有3W光输出平均性能的R＆D样品。这些芯片适用于新颖的多芯片外壳：首次将多达20个蓝色激光芯片封装到一个紧凑的外壳中，从而生产出了第一台光学输出＞ 50W的InGaN激光器件。高度集成的封装可提供独特的小尺寸。封装的外部尺寸为25.5mm×35mm，发射表面为16mm×16.5mm。因此，大大减少了光学对准的复杂性，并且光束准直只需要单片多透镜阵列。除了独特的技术性能外，由于降低了复杂性和组装时间，多管芯封装还大大降低了组装成本。蝶形封装包含4条，每条以2.3A的电流串联多达5个多模激光芯片。典型的模块波长是450nm +/- 10nm。在温度为50℃的情况下，R＆D样品达到了典型的效率。 30％的光输出功率和50W的光输出功率对应于约165W的功耗。这项新技术可用于高亮度投影仪的高性能光引擎。

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