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Advances in single mode and high power AlGaInN laser diode technology for systems applications

机译:用于系统应用的单模大功率AlGaInN激光二极管技术的进步

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摘要

The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries.
机译:AlGaInN材料系统可通过调节激光GaInN量子阱的铟含量,在从〜380nm到可见光〜530nm的很宽的波长范围内制造激光二极管。因此,AlGaInN激光二极管技术是显示器,电信,国防和其他行业中新的破坏性系统级应用开发的关键推动力。

著录项

  • 来源
    《Gallium nitride materials and devices X》|2015年|93631A.1-93631A.11|共11页
  • 会议地点 San Francisco CA(US)
  • 作者单位

    TopGaN Ltd., ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

    TopGaN Ltd., ul. Sokolowska 29/37, 01-142 Warsaw, Poland,Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

    Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

    Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

    TopGaN Ltd., ul. Sokolowska 29/37, 01-142 Warsaw, Poland,Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

    TopGaN Ltd., ul. Sokolowska 29/37, 01-142 Warsaw, Poland,Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

    TopGaN Ltd., ul. Sokolowska 29/37, 01-142 Warsaw, Poland,Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

    TopGaN Ltd., ul. Sokolowska 29/37, 01-142 Warsaw, Poland,Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

    Ammono S.A., Czerwonego Krzyza 2/31, 00-377 Warsaw, Poland;

    TopGaN Ltd., ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

    TopGaN Ltd., ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

    Institute of High Pressure Physics PAS, ul. Sokolowska 29/37, 01-142 Warsaw, Poland;

    School of Engineering, University of Glasgow, Glasgow G12 8LT, U.K.;

    School of Engineering, University of Glasgow, Glasgow G12 8LT, U.K.;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    GaN laser; GaN array; GaN systems;

    机译:歌曲激光;歌曲数组;音乐系统;

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