AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al_2O_3 Deposited by PEALD and BCl_3 Gate Recess Etching

机译：利用PEALD沉积Al_2O_3和BCl_3栅凹槽刻蚀改善AlGaN / GaN MIS-HEMT栅结构。

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The enhancement of electric properties of MIS structures on an AlGaN/GaN heterostructure using Al_2O_3 a gate dielectric are investigated using C(V) and I_d(V_g) measurements. The Al_2O_3 layer was deposited using two types of atomic layer deposition (ALD) techniques: thermal ALD and plasma enhanced ALD. Using PEALD over thermal ALD led to an increase of the threshold voltage V_(th) of 4V, and the suppression of non-uniform C(V) behavior by reducing traps at the Al_2O_3/AlGaN interface. Gate leakage current was also reduced by 6 decades and an I_(on)/I_(off) ratio of 10~9 was achieved, with a subthreshold slope of 81mV/decades. Further improvements were achieved by gate recess etching before the high-k deposition through BCl_3 reactive ion etching (RIE). We were able to further increase V_(th) by 4V while reducing gate leakage current, achieving a 10~(10) I_(on)/I_(off) ratio, without degrading the subthreshold slope and the abruptness of the transition.

机译：使用C（V）和I_d（V_g）测量研究了使用Al_2O_3 a栅极电介质在MISGaN结构上的GaN结构的电性能增强。使用两种类型的原子层沉积（ALD）技术沉积Al_2O_3层：热ALD和等离子体增强ALD。在热ALD上使用PEALD导致阈值电压V_（th）增加4V，并通过减少Al_2O_3 / AlGaN界面处的陷阱来抑制不均匀的C（V）行为。栅极漏电流也减少了6十年，I_（on）/ I_（off）比率达到10〜9，亚阈值斜率达到81mV / decade。在通过BCl_3反应离子刻蚀（RIE）进行高k沉积之前，通过栅极凹槽刻蚀实现了进一步的改进。我们能够将V_（th）进一步提高4V，同时降低栅极泄漏电流，达到10〜（10）的I_（on）/ I_（off）比率，而不会降低亚阈值斜率和跃迁的突变性。

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《Gallium nitride and silicon carbide power technologies 3》|2013年|269-277|共9页
会议地点 San Francisco CA(US)
作者
R. Meunier; A. Torres; M. Charles; E. Morvan; M. Plissonier; F. Morancho;
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CEA-Leti, MINATEC Campus, 17 Rue des martyrs, 38054 Grenoble Cedex 9, France;

CEA-Leti, MINATEC Campus, 17 Rue des martyrs, 38054 Grenoble Cedex 9, France;

CEA-Leti, MINATEC Campus, 17 Rue des martyrs, 38054 Grenoble Cedex 9, France;

CEA-Leti, MINATEC Campus, 17 Rue des martyrs, 38054 Grenoble Cedex 9, France;

CEA-Leti, MINATEC Campus, 17 Rue des martyrs, 38054 Grenoble Cedex 9, France;

LAAS-CNRS, 7 Avenue du Colonel Roche, 31400 Toulouse, France;

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1. AlGaN/GaN MIS-HEMT gate structure improvement using Al_2O_3 deposited by plasma-enhanced ALD [J] . R. Meunier, A. Torres, E. Morvan, Microelectronic Engineering . 2013,第sepa期

机译：利用等离子增强ALD沉积的Al_2O_3改进AlGaN / GaN MIS-HEMT栅极结构
2. Gate Recessed Quasi-Normally OFF Al₂O₃/AlGaN/GaN MIS-HEMT With Low Threshold Voltage Hysteresis Using PEALD AlN Interfacial Passivation Layer [J] . Hsieh T., Chang E.Y., Song Y., Electron Device Letters, IEEE . 2014,第7期

机译：使用PEALD AlN界面钝化层的具有低阈值电压滞后的栅极凹陷准常关Al _{2 O _{3 / AlGaN / GaN MIS-HEMT}}
3. High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-${rm SiN}_{x}$ /RF-Sputtered-${rm HfO}_{2}$ [J] . Choi W., Seok O., Ryu H., IEEE Electron Device Letters . 2014,第2期

机译：采用PEALD-$ {rm SiN} _ {x} $ / RF-Sputtered-$ {rm HfO} _ {2} $的双栅绝缘子的高电压，低漏电流栅极嵌入式常关GaN MIS-HEMT
4. AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al_2O_3 Deposited by PEALD and BCl_3 Gate Recess Etching [C] . R. Meunier, A. Torres, M. Charles, Electrochemical Society meeting . 2013

机译：AlGaN / GaN MIS-HEMT栅极结构使用PEALD和BCL_3栅极凹陷沉积的AL_2O_3使用
5. Investigation of normally-off mode AlGaN/GaN MOS HEMT device utilizing gate recession and p-GaN gate structure with ald grown high k gate insulators for high power application. [D] . Ma, Jin Seock. 2016

机译：研究常关模式的AlGaN / GaN MOS HEMT器件，该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
6. Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-HEMTs with Thin AlOxNy MIS Gate [O] . Hyun-Seop Kim, Myoung-Jin Kang, Jeong Jin Kim, 2020

机译：凹入式栅极结构对具有薄AlOxNy MIS栅极的AlGaN / GaN-on-SiC MIS-HEMT的影响
7. AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by Plasma-Enhanced ALD [O] . R. Meunier, A. Torres, E. Morvan, 2015

机译：利用等离子体增强aLD沉积al2O3改善alGaN / GaN mIs-HEmT栅极结构
8. Device Performance and Reliability Improvements of AlGaN/GaN/Si MOSFET Using Defect-Free Gate Recess and Laser Annealing. [R] . Wallace, R. M. 2015

机译：利用无缺陷栅极凹陷和激光退火改善alGaN / GaN / si mOsFET的器件性能和可靠性。

AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al_2O_3 Deposited by PEALD and BCl_3 Gate Recess Etching

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