50 cm size Seed Cast Si ingot growth and its characterization

著录项

• 来源
  《Gettering and defect engineering in semiconductor technology XVI》|2015年|30-34|共5页
• 会议地点 Bad Staffelstein(DE)
• 作者

  Takashi Sekiguchi; Yoshiji Miyamura; Hirofumi Harada; Karolin Jiptner; Jun Chen; Ronit R. Prakash; Satoshi Nakano; Bing Gao; Koichi Kakimoto;

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• 作者单位

  WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, 305-0044 Tsukuba, Ibaraki, Japan;

  WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, 305-0044 Tsukuba, Ibaraki, Japan,Graduate School of Pure Applied Sciences, Univ. Tsukuba, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan,Research Institute for Applied Mechanics, Kyushu University, 816-8580 Kasuga, Japan;

  WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, 305-0044 Tsukuba, Ibaraki, Japan,Research Institute for Applied Mechanics, Kyushu University, 816-8580 Kasuga, Japan;

  WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, 305-0044 Tsukuba, Ibaraki, Japan;

  WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, 305-0044 Tsukuba, Ibaraki, Japan;

  WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, 305-0044 Tsukuba, Ibaraki, Japan,Graduate School of Pure Applied Sciences, Univ. Tsukuba, 1-1 Namiki, Tsukuba, Ibaraki 305-0047, Japan;

  Research Institute for Applied Mechanics, Kyushu University, 816-8580 Kasuga, Japan;

  Research Institute for Applied Mechanics, Kyushu University, 816-8580 Kasuga, Japan;

  Research Institute for Applied Mechanics, Kyushu University, 816-8580 Kasuga, Japan;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  seed cast growth; mono silicon; dislocation; carbon; oxygen;

  机译：种子生长单晶硅错位;碳;氧;