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首页> 外文会议>Gettering and defect engineering in semiconductor technology XVI >Low temperature internal gettering of bulk defects in silicon photovoltaic materials
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Low temperature internal gettering of bulk defects in silicon photovoltaic materials

机译：硅光伏材料中大量缺陷的低温内部吸杂

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摘要

Multicrystalline silicon (mc-Si) substrates are widely used for photovoltaic cells. The minority carrier lifetime in mc-Si is affected by recombination associated with metallic impurities in many forms, such as point-like defects, precipitates and bound to or precipitated at structural defects such as dislocations. We have studied the effect of low temperature annealing on the lifetime and bulk iron concentration in as-received mc-Si wafers from different locations within a block. Lifetime measurements are made using a temporary iodine-ethanol surface passivation technique to minimize the occurrence of bulk hydrogenation which often occurs from dielectric films. In good wafers from the middle of the block the lifetime is reduced by annealing at 400 ℃ and 500 ℃ in a way which does not correlate with changes in bulk iron concentration. Lifetime improvements occur in relatively poor samples from the top and bottom of the block annealed at 300 ℃, and also in samples from the bottom annealed at 400 ℃. The improvement in bottom wafers correlates with iron loss from the bulk. Our work shows that under some conditions the lifetime in relatively poor as-grown wafers can be improved by low temperature internal gettering.
机译：多晶硅（mc-Si）基板广泛用于光伏电池。 mc-Si中的少数载流子寿命受与多种形式的金属杂质（例如点状缺陷，析出物以及结合或沉淀在结构缺陷（例如位错）处）相关的重组影响。我们已经研究了低温退火对块体内不同位置的原样mc-Si晶片的寿命和铁含量的影响。使用临时的碘-乙醇表面钝化技术进行寿命测量，以最大程度地减少介电膜经常发生的本体氢化的发生。在块中间的优质晶片中，通过在400℃和500℃进行退火而降低了寿命，而这种方式与铁含量的变化无关。在300℃退火的块的顶部和底部相对较差的样品以及在400℃退火的底部样品的寿命都会得到改善。底部晶片的改进与从主体中损失的铁有关。我们的工作表明，在某些条件下，可以通过低温内部吸杂来改善相对较差的成膜晶圆的寿命。

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