Hydrogen-vacancy complexes and their deep states in n-type silicon

著录项

• 来源
  《Gettering and defect engineering in semiconductor technology XVI》|2015年|163-168|共6页
• 会议地点 Bad Staffelstein(DE)
• 作者

  Ilia L. Kolevatov; Frank Herklotz; Viktor Bobal; Bengt G. Svensson; Edouard V. Monakhov;

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• 作者单位

  University of Oslo, Department of Physics, Center for Materials Science and Nanotechnology,P.O.Box 1048 Blindern, N-0316 Oslo, Norway;

  University of Oslo, Department of Physics, Center for Materials Science and Nanotechnology,P.O.Box 1048 Blindern, N-0316 Oslo, Norway;

  University of Oslo, Department of Physics, Center for Materials Science and Nanotechnology,P.O.Box 1048 Blindern, N-0316 Oslo, Norway;

  University of Oslo, Department of Physics, Center for Materials Science and Nanotechnology,P.O.Box 1048 Blindern, N-0316 Oslo, Norway;

  University of Oslo, Department of Physics, Center for Materials Science and Nanotechnology,P.O.Box 1048 Blindern, N-0316 Oslo, Norway;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Silicon; hydrogen; vacancy-hydrogen complexes; implantation; DLTS; MCTS;

  机译：硅;氢;空位-氢络合物；植入DLTS； MCTS;