The impurity spin-dependent scattering effects in the transport and spin resonance of conduction electrons in bismuth doped silicon

机译：杂质自旋相关的散射效应对铋掺杂硅中导电电子的传输和自旋共振的影响

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Transport and spin relaxation characteristics of the conduction electrons in silicon samples doped with bismuth in the 1.1 • 10~(13) - 7.7·10~(15) cm~(-3) concentration range were studied by the Hall and electron spin resonance spectroscopy. Hall effect measurements in the temperature range 10-80 K showed a deviation from the linear dependence of the Hall resistance in the magnetic field, which is a manifestation of the anomalous Hall effect. The magnetoresistance investigation shows that with current increasing magnetoresistance may change its sign from positive to negative, which is most clearly seen when the bismuth concentration goes up to 7.7·10~(15) cm~(-3). The conduction electron spin relaxation rate dramatically increases in silicon samples with sufficiently low concentration of bismuth ~ 2·10~(14) cm~(-3). All these results can be explained in terms of the concept of spin-dependent and spin flip scattering induced by heavy bismuth impurity centers.

机译：通过霍尔和电子自旋共振光谱研究了浓度为1.1•10〜（13）-7.7·10〜（15）cm〜（-3）的铋掺杂硅样品中导电电子的输运和自旋弛豫特性。。在10-80 K的温度范围内进行的霍尔效应测量表明，它与磁场中霍尔电阻的线性相关性有所偏离，这是异常霍尔效应的体现。磁致电阻研究表明，随着电流的增加，磁致电阻的符号可能会从正变为负，这在铋浓度达到7.7·10〜（15）cm〜（-3）时最为明显。在铋的浓度足够低〜2·10〜（14）cm〜（-3）的硅样品中，导电电子自旋弛豫速率急剧增加。所有这些结果都可以用重铋杂质中心引起的自旋相关和自旋翻转散射的概念来解释。

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来源
《Gettering and defect engineering in semiconductor technology XVI》|2015年|327-331|共5页
会议地点 Bad Staffelstein(DE)
作者
Andrey V. Soukhorukov; Davud V. Guseinov; Alexei V. Kudrin; Sergey A. Popkov; Alexandra P. Detochenko; Alexandra V. Koroleva; Alexander A. Ezhevskii; Anton A. Konakov; Nikolai V. Abrosimov; Helge Riemann;
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Lobachevsky State University of Nizhni Novgorod, 23 Gagarin Avenue, 603950 Nizhniy Novgorod, Russia;

Lobachevsky State University of Nizhni Novgorod, 23 Gagarin Avenue, 603950 Nizhniy Novgorod, Russia;

Lobachevsky State University of Nizhni Novgorod, 23 Gagarin Avenue, 603950 Nizhniy Novgorod, Russia;

Lobachevsky State University of Nizhni Novgorod, 23 Gagarin Avenue, 603950 Nizhniy Novgorod, Russia;

Lobachevsky State University of Nizhni Novgorod, 23 Gagarin Avenue, 603950 Nizhniy Novgorod, Russia;

Lobachevsky State University of Nizhni Novgorod, 23 Gagarin Avenue, 603950 Nizhniy Novgorod, Russia;

Lobachevsky State University of Nizhni Novgorod, 23 Gagarin Avenue, 603950 Nizhniy Novgorod, Russia;

Lobachevsky State University of Nizhni Novgorod, 23 Gagarin Avenue, 603950 Nizhniy Novgorod, Russia;

Leibniz Institute for Crystal Growth, Max-Born-Str. 2, D-12489 Berlin, Germany;

Leibniz Institute for Crystal Growth, Max-Born-Str. 2, D-12489 Berlin, Germany;

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conduction electrons; spin-dependent scattering; spin-orbit coupling,magnetoresistance; spin relaxation; electron paramagnetic resonance;

机译：传导电子自旋相关散射自旋轨道耦合，磁阻；旋转放松电子顺磁共振;

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专利

1. The impurity spin-dependent scattering effects in the transport and spin resonance of conduction electrons in bismuth doped silicon [J] . Andrey V. Soukhorukov, Davud V. Guseinov, Alexei V. Kudrin, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2016,第Null期

机译：杂质自旋依赖性散射对铋掺杂硅中导电电子的传输和自旋共振的影响
2. Pulse electron spin resonance investigation of bismuth-doped silicon: Relaxation and electron spin echo envelope modulation [J] . M. Belli, M. Fanciulli, N. V. Abrosimov Physical review . 2011,第23期

机译：铋掺杂硅的脉冲电子自旋共振研究：弛豫和电子自旋回波包络调制
3. On the Theory of the Effects of Resonance Scattering of Conduction Electrons by Donor Impurities [J] . V.I. Okulov The Physics of Metals and Metallography . 2005,第2期

机译：施主杂质对电子的共振散射影响的理论研究
4. The impurity spin-dependent scattering effects in the transport and spin resonance of conduction electrons in bismuth doped silicon [C] . Andrey V. Soukhorukov, Davud V. Guseinov, Alexei V. Kudrin, International Conference on Gettering and Defect Engineering in Semiconductor Technology . 2016

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5. Study of spin-dependent transitions and spin coherence at the (111) oriented phosphorous doped crystalline silicon to silicon dioxide interface using pulsed electrically detected magnetic resonance. [D] . Paik, Seoyoung. 2011

机译：使用脉冲电检测磁共振研究（111）取向的磷掺杂晶体硅与二氧化硅界面处的自旋相关跃迁和自旋相干性。
6. Spin-Dependent Transport through Chiral MoleculesStudied by Spin-Dependent Electrochemistry [O] . PrakashChandra Mondal, ∥, Claudio Fontanesi, -1

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7. Effects of impurity scattering on electron-phonon resonances in semiconductor superlattice high-field transport [O] . Feng, Shaoxin, Grein, Christoph H., Flatte, Michael E. 2003

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8. ELECTRON SPIN RESONANCE AND OPTICAL STUDIES OF HYDROXIDE-DOPED SODIUM FLUORIDE: THE EFFECTS OF IMPURITIES ON COLOR CENTER FORMATION. [R] . meistrich,marvin lawrence 1968

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The impurity spin-dependent scattering effects in the transport and spin resonance of conduction electrons in bismuth doped silicon

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