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首页> 外文会议>Gettering and defect engineering in semiconductor technology XVI >Growth of Czochralski Silicon Crystals Having Ultralow Carbon Concentrations
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Growth of Czochralski Silicon Crystals Having Ultralow Carbon Concentrations

机译：具有超低碳浓度的直拉硅晶体的生长

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摘要

Reducing the carbon concentration in Czochralski (CZ) silicon crystals is crucial in order to improve the properties of high-power devices, such as on-resistance and carrier lifetime. To achieve carbon concentration reduction, it is necessary to reduce carbon monoxide (CO) contamination from the CZ furnace graphite components and to remove the carbon impurities originating from the starting material. In this study, suppressing the chemical reaction between silicon monoxide (SiO) and the graphite heater effectively reduced the CO contamination rate. Furthermore, we attempted to promote CO evaporation during the CZ process in order to remove carbon impurities from the melt. Increasing the Ar gas flow velocity above the melt surface was found to be effective in increasing the CO evaporation rate during both the melting and growth processes. The CO evaporation rate during the melting process of 8-inch CZ silicon was calculated as being of the order of 10~(-2) μg/s. Owing to the effects of the CO evaporation, 8-inch CZ silicon crystals with carbon concentrations lower than 2.0 × 10~(14) atoms/cm~3 at a solidified fraction of 0.85 were grown.
机译：为了改善大功率器件的性能，例如导通电阻和载流子寿命，降低Czochralski（CZ）硅晶体中的碳浓度至关重要。为了降低碳浓度，必须减少来自CZ炉石墨组分的一氧化碳（CO）污染，并去除源自原材料的碳杂质。在这项研究中，抑制一氧化硅（SiO）与石墨加热器之间的化学反应可有效降低CO污染率。此外，我们试图在CZ过程中促进CO蒸发，以从熔体中除去碳杂质。发现在熔体和生长过程中，将Ar气体流速提高到熔体表面上方可有效提高CO蒸发速率。计算出8英寸CZ硅熔化过程中的CO蒸发速率约为10〜（-2）μg/ s。由于CO蒸发的影响，生长出了碳浓度低于2.0×10〜（14）原子/ cm〜3且固化分数为0.85的8英寸CZ硅晶体。

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