Statistical consideration of grain growth mechanism of multicrystalline Si by one directional solidification technique

机译：单向凝固技术对多晶硅晶粒长大机理的统计考虑

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The grain evolution of multicrystalline Si was studied using the ingot grown from microcrystalline template. The grain shape evolution and width increase are not monotonic but may have 3 stages. On the other hand, the grain boundary (GB) analysis suggests that there exit 2 reactions, namely random GB annihilation at the initial stage and Σ3 generation and annihilation at the steady state.

机译：使用从微晶模板生长的晶锭研究了多晶硅的晶粒演化。晶粒形状的演变和宽度的增加不是单调的，而是可以分为三个阶段。另一方面，晶界（GB）分析表明存在2个反应，即在初始阶段随机发生GB hil灭和在稳态产生Σ3和and灭。

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来源
《Gettering and defect engineering in semiconductor technology XVI》|2015年|35-40|共6页
会议地点 Bad Staffelstein(DE)
作者
Takashi Sekiguchi; Ronit R. Prakash1; Karolin Jiptner; Xianjia Luo; Jun Chen; Yoshiji Miyamura; Hirofumi Harada;
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作者单位

WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, 305-0044 Tsukuba, Ibaraki, Japan;

WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, 305-0044 Tsukuba, Ibaraki, Japan;

WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, 305-0044 Tsukuba, Ibaraki, Japan;

WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, 305-0044 Tsukuba, Ibaraki, Japan;

WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, 305-0044 Tsukuba, Ibaraki, Japan;

WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, 305-0044 Tsukuba, Ibaraki, Japan,Research Institute for Applied Mechanics, Kyushu University, 816-8580 Kasuga, Japan;

WPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, 1-1 Namiki, 305-0044 Tsukuba, Ibaraki, Japan,Research Institute for Applied Mechanics, Kyushu University, 816-8580 Kasuga, Japan;

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原文格式 PDF
正文语种 eng
中图分类
关键词
silicon; cast method; grain growth; grain boundaries;

机译：硅;铸造方法谷物生长晶界;

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专利

1. Statistical consideration of grain growth mechanism of multicrystalline Si by one directional solidification technique [J] . Takashi Sekiguchi, Ronit R. Prakashl, Karolin Jiptner, Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2016,第Null期

机译：单向凝固技术对多晶硅晶粒长大机理的统计考虑
2. A {112}X3 grain boundary generated from the decomposition of a 29 grain boundary in multicrystalline silicon during directional solidification [J] . Lu-Chung Chuang, Kensaku Maeda, Keiji Shiga Scripta materialia . 2019,第期

机译：从定向凝固期间从多晶硅硅中的29晶界分解产生的{112} x3晶界
3. Influence of interfacial structure on propagating direction of small-angle grain boundaries during directional solidification of multicrystalline silicon [J] . Chuang Lu-Chung, Kiguchi Takanori, Kodama Yumiko, Scripta materialia . 2019,第期

机译：界面结构对多晶硅定向凝固期间小角晶界传播方向的影响
4. Statistical consideration of grain growth mechanism of multicrystalline Si by one directional solidification technique [C] . Takashi Sekiguchi, Ronit R. Prakash, Karolin Jiptner, International Conference on Gettering and Defect Engineering in Semiconductor Technology . 2016

机译：一种定向凝固技术多晶硅晶粒生长机理的统计考虑
5. Grain boundary dynamics during directional solidification of multicrystalline silicon [D] . Chuang Lu-Chung 2019

机译：多晶硅定向凝固过程中的晶界动力学
6. Grain Orientation Optimization of Two-Dimensional Grain Selector during Directional Solidification of Ni-Based Superalloys [O] . Xintao Zhu, Qiang Yang, Fu Wang, 2020

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7. Growth and characterization of multicrystalline silicon ingots by directional solidification for solar cell applications [O] . Ganesh R. Bairava, Ryningen Birgit, Syvertsen Martin, 2011

机译：定向凝固法在太阳能电池应用中生长和表征多晶硅锭

Statistical consideration of grain growth mechanism of multicrystalline Si by one directional solidification technique

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