Interstitial Carbon in p-Type Copper-Doped Silicon

机译：p型掺杂铜的硅中的间隙碳

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The spectrum of defects produced by 5 MeV electron irradiation at room temperature in the oxygen-lean p-type silicon strongly contaminated with interstitial copper (Cu_i) is studied using the deep-level transient spectroscopy. It is observed that the interstitial carbon defects (C_i), which are abundant in irradiated copper-free samples, are not detected directly after irradiation. The phenomenon is attributed to the formation of a {Cu_i, C_i} complexes which exhibit no deep levels in the lower half of the band gap. The complexes are shown to dissociate under anneals at 300-340 K resulting in the appearance of the C_i species.

机译：使用深层瞬态光谱研究了室温下5 MeV电子辐照在被间隙铜（Cu_i）严重污染的贫氧p型硅中产生的缺陷的光谱。观察到，在辐照后的无铜样品中大量存在的间隙碳缺陷（C_i）并未在辐照后立即检测到。该现象归因于{Cu_i，C_i}复合物的形成，该复合物在带隙的下半部不显示深能级。所述复合物显示在300-340K下的退火下解离，导致出现C_1物种。

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来源
《Gettering and defect engineering in semiconductor technology XVI》|2015年|302-307|共6页
会议地点 Bad Staffelstein(DE)
作者
Nikolai Yarykin; Joerg Weber;
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作者单位

Institute of Microelectronics Technology RAS, Chernogolovka, 142432 Russia;

Technische Universitaet Dresden, 01062 Dresden, Germany;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
silicon; copper impurity; carbon impurity; radiation defects;

机译：硅;铜杂质碳杂质辐射缺陷;

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专利

1. Interstitial Carbon in p-Type Copper-Doped Silicon [J] . Nikolai Yarykin, J?rg Weber Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2016,第Null期

机译：p型掺杂铜的硅中的间隙碳
2. Interstitial carbon formation in irradiated copper-doped silicon [J] . Yarykin N. A., Weber J. Semiconductors . 2015,第6期

机译：辐照掺杂铜硅中间隙碳的形成
3. Formation and Annealing of Metastable (Interstitial Oxygen)-(Interstitial Carbon) Complexes in n- and p-Type Silicon [J] . Makarenko L. F., Korshunov F. P., Lastovskii S. B., Semiconductors . 2014,第11期

机译：n型和p型硅中亚稳态（间隙氧）-（间隙碳）配合物的形成和退火
4. Interstitial Carbon in p-Type Copper-Doped Silicon [C] . Nikolai Yarykin, Jorg Weber International Conference on Gettering and Defect Engineering in Semiconductor Technology . 2016

机译：P型铜掺杂硅中的间质碳
5. The interaction of silicon self-interstitials and substitutional carbon in silicon based heterostructures. [D] . Carroll, Malcolm S. 2001

机译：硅自填隙与硅基异质结构中取代碳的相互作用。
6. Antibacterial and Osteogenic Functionalization of Titanium With Silicon/Copper-Doped High-Energy Shot Peening-Assisted Micro-Arc Oxidation Technique [O] . Xinkun Shen, Wenjia Hu, Linchao Ping, 2020

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7. Investigation of Self Interstitial Influences in Light and Dark Induced Degradation in p-type Compensated Silicon [O] . Yen V. Mong-the, Barakel D., Périchaud I., 2012

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8. Fabrication, Microstructural Characterization, and Internal Photoresponse ofPlatinum Silicide/P-Type Silicon and Iridium Silicide/P-Type Silicon Schottky Barrier Photodetectors for Infrared Focal Plane Arrays [R] . Mercer, D. E. 1991

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Interstitial Carbon in p-Type Copper-Doped Silicon

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