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Investigation of deep levels in vanadium-doped CdTe and CdZnTe

机译:钒掺杂CdTe和CdZnTe中深水平的研究

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Deep levels in vanadium-doped CdTe and CdZnTe crystals grown by vertical Bridgman for photorefractive applications are reviewed. Based on photo-induced current transient spectroscopy, deep-level transient spectroscopy and deep-level optical spectroscopy, deep traps are identified and their electrical and optical properties are characterized. A discussion about their origin and a comparison with results obtained by other spectroscopy techniques are given. direct c 1999 Elsevier Science B.V. All rights reserved.
机译:回顾了垂直布里奇曼生长的用于光折变应用的钒掺杂的CdTe和CdZnTe晶体中的深水平。基于光感生电流瞬态光谱,深层瞬态光谱和深层光学光谱,识别深阱并表征其电学和光学性质。讨论了它们的起源,并与其他光谱技术获得的结果进行了比较。直接c 1999 Elsevier Science B.V.保留所有权利。

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