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首页> 外文会议>High-Power Laser Ablation VI pt.1 >Development and application of UV excimer lamps from 354 - 126 nm
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Development and application of UV excimer lamps from 354 - 126 nm

机译：354-126 nm的紫外准分子灯的开发和应用

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摘要

The use of high intensity ultraviolet (UV) and vacuum ultraviolet (VUV) radiation generated from decaying excimer complexes through dielectric barrier discharge (silent discharges) sources for the purposes of surface processing and modification is reviewed. Such sources provide a singular dominant narrow-band emission at various wavelengths(λ) between 126 - 354 nm. The remarkable simplicity of supplying these sources and flexibility of their geometric configurations allow them to be coupled in parallel thus providing high photon fluxes over large areas. The monochromatic selectivity allows for application to process and chemical pathway specific tasks by simple variation of the discharge gas mixture. These sources are an interesting addition to and as an alternative to lasers for large scale industrial applications and their unique characterisitics have led to their use in a number of low-temperature material modification techniques, some of which are reviewed here. These include the photo-induced low-temperature formation of oxynitride layers, high-κ thin film layers and the post-deposition annealing of pulsed laser deposited (PLD) thin films.
机译：审查了使用高强度紫外（UV）和真空紫外（VUV）辐射，这些辐射是通过介电势垒放电（无声放电）源从受激准分子配合物衰变而产生的，用于表面处理和改性。此类光源在126-354 nm之间的各种波长（λ）处提供奇异的占主导地位的窄带发射。提供这些光源的显着简单性及其几何配置的灵活性使它们可以并联耦合，从而在大面积上提供高光子通量。单色选择性允许通过简单地改变排气混合物来应用于处理和化学途径的特定任务。这些光源是大规模工业应用中激光的有趣补充，并且可以替代激光，其独特的特性已导致它们在许多低温材料改性技术中的使用，此处对其中一些进行了综述。其中包括氧氮化物层，高κ薄膜层的光诱导低温形成以及脉冲激光沉积（PLD）薄膜的沉积后退火。

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