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Fabrication and Characterization of 3D C/SiC Composites via Slurry and PCVI Joint Process

机译:通过浆料和PCVI联合工艺制备和表征3D C / SiC复合材料

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The effect of the pressure - pulsed chemical vapour infiltration on improving the quality of CMC - parts has been investigated. In a fabrication process of three - dimensional C/SiC composites, the PCVI was applied as a final densification step for specimens made by a joint process consisting of slurry infiltration and polycarbosilane impregnation / pyrolysis. PCVI was carried out in the temperature range of 1323-1423 K using a source gas system of SiCl_4 - CH_4 - H_2. The crystalline phases deposited by PCVI varied with temperature, gas concentration and holding time. At 1373 K, a large amount of SiC deposition into the matrix was observed, and the deposition rate was at least twice higher than for the CH_3SiCl_3 - H_2 gas system in our previous work. The flexural strength remarkably increased after the PCVI step.
机译:研究了压力脉冲化学气相渗透对改善CMC零件质量的影响。在三维C / SiC复合材料的制造过程中,PCVI被用作最终的致密化步骤,用于通过包括浆料浸渗和聚碳硅烷浸渍/热解在内的联合工艺制成的样品。使用SiCl_4-CH_4- H_2的原​​料气系统在1323-1423 K的温度范围内进行PCVI。 PCVI沉积的结晶相随温度,气体浓度和保持时间而变化。在1373 K处,观察到大量SiC沉积到基体中,并且沉积速率比我们先前工作中的CH_3SiCl_3-H_2气体系统高至少两倍。在PCVI步骤之后,弯曲强度显着增加。

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