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首页> 外文会议>IC Design and Technology, 2009. ICICDT '09 >Future of planar self-aligned block oxide based MOSFET technology
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Future of planar self-aligned block oxide based MOSFET technology

机译：基于平面自对准块氧化物的MOSFET技术的未来

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摘要

In this paper, we examine the current-voltage (IV) and capacitance-voltage (CV) characteristics of self-aligned (SA), planar block oxide (BO) metal-oxide semiconductor field-effect transistors (MOSFETs) using technology computer-aided design (TCAD) tools. For the first time, a comparison of the different types of BO MOSFETs, such as fully depleted silicon-on-insulator (FDSOI) FET with BO (bFDSOI), silicon-on-partial-insulator (SPI) FET with BO (bSPI), source/drain (S/D)-tied bFDSOI-FET, and multi-substrate contact (MSC) FET, is studied through numerical simulations. The preliminary results show that the substrate-tie transistors demonstrate diminished self-heating and poorer short-channel effects (SCEs) when compared to a non-substrate-tie transistor (bFDSOI). Self-heating and floating-body effects are specially related to the long-term reliability of bFDSOI devices. Hence, the tradeoff between performance and reliability is also shown in this paper.
机译：在本文中，我们使用计算机技术检查了自对准（SA），平面块氧化物（BO）金属氧化物半导体场效应晶体管（MOSFET）的电流-电压（IV）和电容-电压（CV）特性，辅助设计（TCAD）工具。首次比较了不同类型的BO MOSFET，例如带有BO的完全耗尽型绝缘体上硅（FDSOI）FET（bFDSOI），带有BO的部分绝缘体上硅（SPI）FET（bSPI）通过数值模拟研究了源/漏（S / D）型bFDSOI-FET和多衬底接触（MSC）FET。初步结果表明，与非衬底连接的晶体管（bFDSOI）相比，衬底连接的晶体管表现出的自热降低和短沟道效应（SCE）差。自热效应和浮体效应与bFDSOI器件的长期可靠性特别相关。因此，本文还显示了性能和可靠性之间的权衡。

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