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首页> 外文会议>ICO20: Display Devices and Systems >Fabrication of Polysilicon Thin Film on Glass with Low-temperature UV-assisted Crystallization
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Fabrication of Polysilicon Thin Film on Glass with Low-temperature UV-assisted Crystallization

机译：低温紫外线辅助结晶在玻璃上制备多晶硅薄膜

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The amorphous silicon (a-Si) film was crystallized on glass by a simple method employed ultraviolet at temperatures as low as 400℃. The employ of ultraviolet enhanced the crystallization of amorphous silicon. This method is able to uniformly crystallized large-area amorphous silicon films. The polysilicon films crystallized by this way are suitable for the fabrication of thin film transistors on ordinary glass. Crystallization process is performed in a furnace. Amorphous silicon sample is placed on a hot plate and irradiated by a bank of ultraviolet lamps through a diffuser plate to improve the uniformity of light that irradiates the sample. Raman microscopy is used for analyzing the qualities of UV-assisted crystallized silicon films. By measuring the Raman spectra the effects of anneal temperature and process time on the crystallizing behavior, crystallinity and grain size of the processed films were obtained. There has a threshold temperature for crystallization of amorphous silicon film in the presence of ultraviolet irradiation with certain intensity, i.e. by ultraviolet irradiation with certain intensity only when the temperature is up to the threshold temperature, the crystallization can be triggered. The threshold temperature is 400℃ when the intensity of ultraviolet irradiation is 1mW/cm~2. Above threshold temperature, the increase of anneal temperature increased the rate of crystallization. Crystallinity and grain size extracted from Raman spectra of samples increase with the extending of process time at certain temperature. Crystallization of amorphous silicon film with thickness of 50nm completed within 6 hours at 400℃ irradiated by ultraviolet with intensity of 2mW/cm~2.
机译：通过简单的方法在低至400℃的温度下使用紫外线在玻璃上结晶出非晶硅（a-Si）膜。紫外线的使用增强了非晶硅的结晶。该方法能够使大面积的非晶硅膜均匀地结晶。通过这种方式结晶的多晶硅膜适用于在普通玻璃上制造薄膜晶体管。结晶过程在炉中进行。将非晶硅样品放在加热板上，并通过一排扩散板用一排紫外线灯照射，以提高照射样品的光的均匀性。拉曼显微镜用于分析紫外线辅助结晶硅膜的质量。通过测量拉曼光谱，获得了退火温度和加工时间对加工膜的结晶行为，结晶度和晶粒尺寸的影响。在存在一定强度的紫外线辐射的情况下，即当只有温度达到阈值温度时，通过一定强度的紫外线辐射，存在非晶硅膜结晶的阈值温度。紫外线照射强度为1mW / cm〜2时，阈值温度为400℃。高于阈值温度，退火温度的升高增加了结晶速率。在一定温度下，随着时间的延长，从样品的拉曼光谱中提取的结晶度和晶粒尺寸会增加。在2mW / cm〜2的紫外线照射下，在400℃下6小时内完成了厚度为50nm的非晶硅膜的晶化。

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