• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>ICO20: Optical Devices and Instruments >Interferometric Thickness Calibration of 300 mm Silicon Wafers
【24h】

Interferometric Thickness Calibration of 300 mm Silicon Wafers

机译：300 mm硅晶圆的干涉厚度校准

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The "Improved Infrared Interferometer" (IR~3) at the National Institute of Standards and Technology (NIST) is a phase-measuring interferometer, operating at a wavelength of 1550 nm, which is being developed for measuring the thickness and thickness variation of low-doped silicon wafers with diameters up to 300 mm. The purpose of the interferometer is to produce calibrated silicon wafers, with a certified measurement uncertainty, which can be used as reference wafers by wafer manufacturers and metrology tool manufacturers. We give an overview of the design of the interferometer and discuss its application to wafer thickness measurements. The conversion of optical thickness, as measured by the interferometer, to the wafer thickness requires knowledge of the refractive index of the material of the wafer. We describe a method for measuring the refractive index which is then used to establish absolute thickness and thickness variation maps for the wafer.
机译：美国国家标准技术研究院（NIST）的“改进型红外干涉仪”（IR〜3）是一种相位测量干涉仪，工作在1550 nm的波长下，正在开发用于测量低厚度的厚度和厚度变化掺杂的硅晶片，直径最大为300 mm。干涉仪的目的是生产经过校准的，具有认证的测量不确定度的硅晶片，晶片制造商和计量工具制造商可以将其用作参考晶片。我们概述了干涉仪的设计，并讨论了其在晶片厚度测量中的应用。通过干涉仪测量的光学厚度到晶片厚度的转换需要知道晶片材料的折射率。我们描述了一种用于测量折射率的方法，然后该方法用于为晶片建立绝对厚度和厚度变化图。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号