NATIVE DEFECT COMPENSATION IN Ⅲ-ANTIMONIDE BULK SUBSTRATES

机译：Ⅲ-锑化物本体的自然缺陷补偿

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As-grown, undoped Ⅲ-antimonide bulk substrates contain high concentration of native defects resulting in high residual carrier density. In this paper, we have demonstrated that native defects can be compensated in bulk substrates of GaSb, InSb, and Ga_(1-x)In_xSb via impurity doping and low temperature growth from nonstoichiomet-ric melts and solutions. Decrease in residual carrier concentration up to one order of magnitude at 300 K and three orders of magnitude at 77 K have been achieved.

机译：刚生长的未掺杂Ⅲ-锑化物本体衬底包含高浓度的天然缺陷，从而导致高的残留载流子密度。在本文中，我们已经证明，GaSb，InSb和Ga_（1-x）In_xSb的块状衬底可以通过杂质掺杂和非化学计量熔体和溶液的低温生长来补偿固有缺陷。已实现将残留载流子浓度降低至300 K时一个数量级和77 K时三个数量级。

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《IEEE Lester Eastman Conference on High Performance Devices; 20040804-06; Rensselaer Polytechnic Institute》|2004年|P.34-39|共6页
会议地点 Rensselaer Polytechnic Institute
作者
ROBINSON PINO; YOUNGOK KO; PARTHA S. DUTTA;
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Electrical, Computer and Systems Engineering Department Rensselaer Polytechnic Institute, Troy, NY 12180-3590, USA;

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正文语种 eng
中图分类半导体技术;
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1. NATIVE DEFECT COMPENSATION IN III-ANTIMONIDE BULK SUBSTRATES [J] . Robinson Pino, Youngok Ko, Partha S. Dutta International Journal of High Speed Electronics and Systems: Devices, Integrated Circuits and Systems, Optical and Quantum Electronics . 2004,第3期

机译：III-锑化物本体的天然缺陷补偿
2. Compensation of Native Defect Acceptors in Microcrystalline Ge and Si_(1-x)Ge_x Thin Films by Oxygen Incorporation: Electrical Properties and Solar Cell Performance [J] . Takuya Matsui, Chia-Wen Chang, Kouichi Mizuno, Japanese journal of applied physics . 2012,第9ISSUE1期

机译：掺氧补偿微晶Ge和Si_（1-x）Ge_x薄膜中的天然缺陷受体：电性能和太阳能电池性能
3. First-principles study of native defects in TlBr: Carrier trapping, compensation, and polarization phemomenon [J] . Du Mao-Hua Journal of Applied Physics . 2010,第5期

机译：TlBr天然缺陷的第一性原理研究：载流子捕获，补偿和极化现象
4. NATIVE DEFECT COMPENSATION IN III-ANTIMONIDE BULK SUBSTRATES [C] . ROBINSON PINO, YOUNGOK KO, PARTHA S. DUTTA IEEE Lester Eastman Conference on High Performance Devices . 2005

机译：III - 锑化物散装基材的本地缺陷补偿
5. Bulk crystal growth process for compositionally homogeneous gallium indium antimonide substrates. [D] . Kim, Hee Jeong. 2005

机译：组成均匀的镓铟锑化物基质的块状晶体生长工艺。
6. Enhancing bulk defect-mediated absorption in silicon waveguides by doping compensation technique [O] . Qiang Zhang, Hui Yu, Tian Qi, -1

机译：通过掺杂补偿技术增强硅波导中的大量缺陷介导的吸收
7. Cathodoluminescence studies of growth and process-induced defects in bulk gallium antimonide [O] . Méndez Martín Bianchi, Dutta P. S., Piqueras de Noriega Javier, 1995

机译：块状锑化镓的生长和过程诱导缺陷的阴极发光研究

NATIVE DEFECT COMPENSATION IN Ⅲ-ANTIMONIDE BULK SUBSTRATES

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