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Low strain Quantum Dots in a double Well Infrared Detect

机译:双阱红外检测中的低应变量子点

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摘要

We report the fabrication of low strain quantum-dots-in-a-double-well (DDWELL) infrared photodetector where the net strain on the system has been reduced by limiting the total indium content in the system. The detector consists of InAs dots embedded in Ino.15Gao.85As and GaAs wells with a Alo.1Gao.9As barrier, as opposed to In_(0.15)Ga_(0.85)As wells and a GaAs barrier in standard dots-in-a-well (DWELL) detector. The structure was a result of multilevel optimization involving the dot, well layers above and below the dot for achieving the desired wavelength response and higher absorption, and the thickness of the barriers for reduction in dark current. Detector structures grown using solid source molecular beam epitaxy (MBE) were processed and characterized. The reduction in total strain has enabled the growth of higher number of active region layers resulting in enhanced absorption of light. The detector shows dual color response with peaks in the mid-wave infrared (MWIR) and the long-wave infrared (LWIR) region. A peak detectivity of 6.7× 10~10 cm. Hz~(1/2)/W was observed at 8.7μm. The detector shows promise in raising the operating temperature of DWELL detectors, thereby enabling cheaper operation.
机译:我们报告了一种低应变的双阱量子点双阱(DDWELL)红外光电探测器的制造,该系统通过限制系统中的总铟含量降低了系统上的净应变。该检测器由嵌入Ino.15Gao.85As和具有Alo.1Gao.9As势垒的GaAs阱中的InAs点组成,与In_(0.15)Ga_(0.85)As阱和标准点中的GaAs势垒相反井(DWELL)检测器。该结构是多级优化的结果,该优化涉及点,点上方和下方的阱层,以实现所需的波长响应和更高的吸收度,以及势垒的厚度,以减少暗电流。使用固体源分子束外延(MBE)生长的检测器结构得到了处理和表征。总应变的降低使得能够生长更多数量的有源区层,从而增强了光的吸收。检测器显示双色响应,并在中波红外(MWIR)和长波红外(LWIR)区域出现峰值。峰检测灵敏度为6.7×10〜10 cm。在8.7μm处观察到Hz〜(1/2)/ W。该检测器有望提高DWELL检测器的工作温度,从而实现更便宜的操作。

著录项

  • 来源
  • 会议地点 San Diego CA(US)
  • 作者单位

    Center for High Technology Materials, ECE Department, University of New Mexico, 1313 Goddard St. SE, Albuquerque, New Mexico 87106;

    Center for High Technology Materials, ECE Department, University of New Mexico, 1313 Goddard St. SE, Albuquerque, New Mexico 87106 Biology Department, Zanvyl Krieger School of Arts and Sciences, The Johns Hopkins University,Baltimore, MD 21218;

    Center for High Technology Materials, ECE Department, University of New Mexico, 1313 Goddard St. SE, Albuquerque, New Mexico 87106;

    Center for High Technology Materials, ECE Department, University of New Mexico, 1313 Goddard St. SE, Albuquerque, New Mexico 87106;

    Center for High Technology Materials, ECE Department, University of New Mexico, 1313 Goddard St. SE, Albuquerque, New Mexico 87106;

    Center for High Technology Mater;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 V443.5;
  • 关键词

    quantum dots; infrared detector; dots-in-a-well detector;

    机译:量子点;红外探测器井中点检测器;

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