首页> 外文会议>Conference on infrared spaceborne remote sensing and instrumentation >Low strain Quantum Dots in a Double Well Infrared Detectors
【24h】

Low strain Quantum Dots in a Double Well Infrared Detectors

机译:双井红外探测器中的低应变量子点

获取原文

摘要

We report the fabrication of low strain quantum-dots-in-a-double-well (DDWELL) infrared photodetector where the net strain on the system has been reduced by limiting the total indium content in the system. The detector consists of InAs dots embedded in In_(0.15)Ga_(0.85)As and GaAs wells with a A1_(0.1)Ga_(0.9)As barrier, as opposed to In_(0. 15)Ga_(0.85)As wells and a GaAs barrier in standard dots-in-a-well (DWELL) detector. The structure was a result of multilevel optimization involving the dot, well layers above and below the dot for achieving the desired wavelength response and higher absorption, and the thickness of the barriers for reduction in dark current. Detector structures grown using solid source molecular beam epitaxy (MBE) were processed and characterized. The reduction in total strain has enabled the growth of higher number of active region layers resulting in enhanced absorption of light. The detector shows dual color response with peaks in the mid-wave infrared (MWIR) and the long-wave infrared (LWIR) region. A peak detectivity of 6.7 x 10~10 cmVHz/W was observed at 8.7μm. The detector shows promise in raising the operating temperature of DWELL detectors, thereby enabling cheaper operation.
机译:我们报告了低应变量子点内阱(DdWell)红外光电探测器的制造,其中通过限制了系统中的总铟含量,减少了系统上的净应变。探测器由INAD(0.15)GA_(0.85)的INAS点组成,AS和GAAS孔,具有A1_(0.1)GA_(0.9)作为屏障,而不是IN_(0.15)GA_(0.85)以及孔在标准点内(居住)探测器中的GaAs屏障。该结构是多级优化涉及点,下方和下方的点,用于实现所需的波长响应和更高吸收的孔,以及用于减少暗电流的屏障的厚度。处理使用固体源分子束外延(MBE)生长的检测器结构并表征。总菌株的降低使得具有较高数量的有源区层的生长,导致光的吸收增强。检测器显示了中波红外(MWIR)和长波红外(LWIR)区域的峰值的双色响应。在8.7μm观察到6.7×10〜10cmvHz / W的峰值检测率。探测器显示了提高停留探测器的工作温度的承诺,从而能够更便宜。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号