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Ferroelectric Property and Microstructures of La-doped Bi_4Ti_3O_(12) Thin Films

机译：La掺杂Bi_4Ti_3O_（12）薄膜的铁电性能和显微结构

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摘要

La-doped bismuth titanate (Bi_(4-x)La_xTi_3O_(12): BLT) and pure Bi_4Ti_3O(12) (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO_2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-V hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization (P_r) and coercive field (E_c) of the BLT ceramic with x=0.75 were above 20μC/cm~2 and 85KV/cm, respectively.
机译：通过射频磁控溅射技术在Pt / Ti / SiO_2 / Si衬底上制备了La掺杂的钛酸铋（Bi_（4-x）La_xTi_3O_（12）：BLT）和纯Bi_4Ti_3O（12）（BIT）薄膜。这些样品具有没有优选取向的多晶双层钙钛矿结构，并且由具有随机取向的发达的棒状晶粒组成。对于x = 0.25和1.0的样品，电流-电压特性表现出负的差分电阻行为，其PV磁滞回线的特征是漏电流较大，而对于x = 0.5和0.75的样品，其电流-电压特性表现出简单的欧姆行为。它们的PV磁滞回线是饱和且无失真的磁滞回线。 x = 0.75的BLT陶瓷的剩余极化强度（P_r）和矫顽场（E_c）分别大于20μC/ cm〜2和85KV / cm。

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  • 来源
    《Inorganic thin films and coatings》|2012年|114-117|共4页
  • 会议地点 Guilin(CN)
  • 作者

    X. A. Mei; R. F. Liu; C. Q. Huang; J. Liu;

  • 作者单位

    School of Physics and Electronics, Hunan Institute of Science and Technology, Yueyang, 414000,China;

    School of Physics and Electronics, Hunan Institute of Science and Technology, Yueyang, 414000,China;

    School of Physics and Electronics, Hunan Institute of Science and Technology, Yueyang, 414000,China;

    School of Physics and Electronics, Hunan Institute of Science and Technology, Yueyang, 414000,China;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Ferroelectric; Dielectric; Films;

    机译：铁电;电介质电影;

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