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Effects of Substrate Temperature on the Properties of Silicon Nitride Films by PECVD

机译：衬底温度对PECVD氮化硅薄膜性能的影响

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摘要

Under different growth conditions, silicon nitride (SiNx) thin films were deposited successfully on Si(100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The surface morphologies of the thin films were investigated using atomic force microscope (AFM). The average transmittance in the visible region was over 90%.
机译：在不同的生长条件下，氮化硅（SiNx）薄膜通过等离子增强化学气相沉积（PECVD）成功地沉积在Si（100）基板和玻璃基板上。用椭偏仪测试了薄膜的厚度，折射率和生长速率。使用原子力显微镜（AFM）研究了薄膜的表面形态。可见光区域的平均透射率超过90％。

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  • 来源
  • 会议地点 Guilin(CN)
  • 作者

    Chunya Li; Xifeng Li; Longlong Chen; Jifeng Shi; Jianhua Zhang;

  • 作者单位

    Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, China;

    Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, China;

    Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, China;

    Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, China;

    Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Silicon nitride films; PECVD;

    机译：氮化硅膜；化学气相沉积;

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