The chemical and electrical properties of InGaN quantum wells grown with interrupts: A comprehensive TEM case study

机译：中断生长的InGaN量子阱的化学和电学性质：全面的TEM案例研究

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Using off-axis electron holography, high resolution electron microscopy (HREM) and energy filtering TEM (EFTEM), we have looked at the structure of InGaN multiple quantum wells (MQWs), grown with varying interrupt times. We have measured the piezoelectric field strength, indium concentration and quantum well width. Our results show that indium deposited without an interrupt creates a quantum well with extensive indium fluctuations which have a very weak overall piezoelectric field strength. However using interrupt times ranging from five to thirty seconds creates a quantum well of uniform In composition and an intense piezoelectric field.

机译：使用离轴电子全息图，高分辨率电子显微镜（HREM）和能量过滤TEM（EFTEM），我们研究了具有不同中断时间的InGaN多量子阱（MQW）的结构。我们已经测量了压电场强度，铟浓度和量子阱宽度。我们的结果表明，不间断地沉积铟会创建一个量子阱，该量子阱具有宽泛的铟波动，而整体压电场强度非常弱。但是，使用5到30秒的中断时间会创建一个具有均匀In组成和强压电场的量子阱。

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《Institute of Physics Electron Microscopy and Analysis Group Conference, Sep 5-7, 2001, Dundee》|2001年|p.481-484|共4页
会议地点 Dundee(GB);Dundee(GB)
作者
J S Barnard; N Sharma; H K Cho; C J Humphreys;
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作者单位

Department of Materials Science Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, U.K.;

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原文格式 PDF
正文语种 eng
中图分类无线电电子学、电信技术;
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机译：通过金属有机化学气相沉积生长生长中断的InGaN自组装量子点
2. A TEM Study of InGaN Layers and Quantum Wells Grown by MOCVD [J] . P. Ruterana, R. Aguinet, M. A. Poisson Physica status solidi, B. Basic research . 1999,第1期

机译：MOCVD生长的InGaN层和量子阱的TEM研究
3. Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching [J] . Lee-Woon Jang, Dae-Woo Jeon, A.Y. Polyakov Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2014,第Null期

机译：在通过电化学和光电化学蚀刻相结合的多孔GaN模板上生长的GaN膜和GaN / InGaN发光二极管的电学和结构特性
4. The chemical and electrical properties of InGaN quantum wells grown with interrupts: A comprehensive TEM case study [C] . J S Barnard, N Sharma, H K Cho, Institute of Physics Electron Microscopy and Analysis Group conference . 2001

机译：InGaN量子孔的中断生长的化学和电性能：全面的TEM案例研究
5. InGaN/GaN multiple quantum well structures: Submicron structural, optical, electrical and chemical properties. [D] . Li, Ying. 2013

机译：InGaN / GaN多量子阱结构：亚微米结构，光学，电和化学性质。
6. A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates [O] . Dmytro Kundys, Danny Sutherland, Matthew J. Davies, 2016

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The chemical and electrical properties of InGaN quantum wells grown with interrupts: A comprehensive TEM case study

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