Low Von 17kV SiC IGBT assisted n-MOS Thyristor

机译：低V on 17kV SiC IGBT辅助n-MOS晶闸管

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The SiC MOS thyristor with IGBT was designed and fabricated for the first time. Von of 5 V and R_onA,diff of 15 mΩcm² were improved over IGBTs fabricated under the same wafer and process conditions. The on-characteristics were almost constant with temperature, and did not deteriorate at 423K. Proposed MOS thyristor succeeded in switching operation, and the switching speed was equivalent to that of the IGBT in both turn-on and turn-off.

机译：首次设计并制造了带IGBT的SiC MOS晶闸管。 5 V和R的Von _{onA，diff
15毫欧厘米
^{2
与在相同晶片和工艺条件下制造的IGBT相比，它们的性能得到了改善。导通特性随温度几乎恒定，并且在423K时不劣化。所建议的MOS晶闸管成功地进行了开关操作，并且在导通和关断时的开关速度均与IGBT相同。}}

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来源
《International Electron Devices Meeting》|2019年|1-4|共4页
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S. Matsunaga; T. Mizushima; K. Takenaka; Y. Kiuchi; A. Koyama; Y. Yonezawa; H. Okumura;
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insulated gate bipolar transistors; MOS-controlled thyristors; silicon compounds; wide band gap semiconductors;

机译：绝缘栅双极晶体管; MOS控制晶闸管;硅化合物;宽带隙半导体;

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Low Von 17kV SiC IGBT assisted n-MOS Thyristor

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