MECHANISM OF n-DOPING OF SILICON CARBIDE EPITAXIAL FILMS

机译：碳化硅外延膜的n-掺杂机理

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A kinetic model for the n-type doping of SiC is presented. The attention is focalized both on a complete chemical mechanism, with elementary reactions, and on a lumped one; these mechanisms are then used in a 1-D model of a Horizontal Hot Wall Reactor to obtain doping profiles during crystal growth.

机译：给出了SiC n型掺杂的动力学模型。注意力集中在具有基本反应的完整化学机理和集中的化学机理上。然后将这些机制用于水平热壁反应器的1-D模型中，以在晶体生长期间获得掺杂分布。

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来源
《International Astronautical Congress(IAC2006); 20061002-06; Valencia(ES)》|2006年|P.9234-92359245|共3页
会议地点 Valencia(ES)
作者
A. Fiorucci; D. Moscatelli; M. Masi;
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作者单位

Dipartimento di Chimica Materiali e Ingegneria Chimica 'Giulio Natta', Politecnico di Milano, via Mancinelli 7, 20131 Milan Italy;

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会议组织
原文格式 PDF
正文语种 eng
中图分类航天（宇宙航行）;
关键词
A1. doping; A3. chemical vapor deposition processes; A3. hot wail epitaxy; B2. semiconducting materials;

机译：A1。掺杂; A3。化学气相沉积工艺; A3。热墙外延； B2。半导体材料;

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专利

1. Mechanism of n-doping of silicon carbide epitaxial films [J] . A. Fiorucci, D. Moscatelli, M. Masi Journal of Crystal Growth . 2007,第1期

机译：碳化硅外延膜的n掺杂机理
2. Polytype Stability and Microstructural Characterization of Silicon Carbide Epitaxial Films Grown on [1120]- and [0001]-Oriented Silicon Carbide Substrates [J] . S.M. BISHOP, C.L. REYNOLDS, Z. LILIENTAL-WEBER, Journal of Electronic Materials . 2007,第4期

机译：[1120]和[0001]取向的碳化硅衬底上生长的碳化硅外延膜的多型稳定性和显微结构表征
3. Polytype Stability and Microstructural Characterization of Silicon Carbide Epitaxial Films Grown on [ $ {hbox{11}}overline{{hbox{2}}} {hbox{0}} $ ]- and [0001]-Oriented Silicon Carbide Substrates [J] . S.M. Bishop, C.L. Reynolds Jr., Z. Liliental-Weber, Journal of Electronic Materials . 2007,第4期

机译：[$ {hbox {11}} overline {{hbox {2}}} {hbox {0}} $]和[0001]取向的碳化硅衬底上生长的碳化硅外延膜的多型稳定性和显微结构表征
4. MECHANISM OF n-DOPING OF SILICON CARBIDE EPITAXIAL FILMS [C] . A. Fiorucci, D. Moscatelli, M. Masi International Astronautical Congress . 2006

机译：碳化硅外延薄膜n掺杂的机理
5. Thin polytype inclusions in 4H silicon carbide epitaxial films and isotope and anharmonic effects in carbon-hydrogen vibrational centers of silicon carbide. [D] . Bai, Song. 2003

机译：4H碳化硅外延膜中的薄多型夹杂物以及碳化硅的碳氢振动中心的同位素和非谐效应。
6. In situ-grown hexagonal silicon nanocrystals in silicon carbide-based films [O] . Tae-Youb Kim, Chul Huh, Nae-Man Park, 2012

机译：碳化硅基薄膜中的原位生长六角形硅纳米晶体
7. Highly Ordered Boron Nitride/Epigraphene Epitaxial Films on Silicon Carbide by Lateral Epitaxial Deposition [O] . -1

机译：通过横向外延沉积的碳化硅上高度有序的氮化硼/形状外延薄膜
8. Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy [R] . 1996

机译：碳化硅外延薄膜的原子力显微镜研究

MECHANISM OF n-DOPING OF SILICON CARBIDE EPITAXIAL FILMS

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